SGS Thomson Microelectronics BFX34 Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
DESCRIPTION
The BFX34 is a silicon epitaxial planar NPN
transistor in Jedec TO-39 metal case, intented for
high current applications.
Very low saturation voltage and high speed at
high current levels make it ideal for power drivers,
power amplifiers, switching power supplies and
relay drivers inverters.
BFX34
SILI CON NPN TRANSISTOR
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) 120 V
CBO
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
Collector Current 5 A
I
C
Total Dissipation at T
tot
T
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
case
amb
≤ 25 oC
≤ 25 oC
0.87
5
W
W
o
C
o
C
June 1997
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BFX34
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
(BR)CBO
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗
Collector-base
= 60 V 0.02 10 µA
V
CE
= 4 V 0.05 10 µA
V
EB
= 5 mA 120 V
I
C
Breakdown Voltage
(I
= 0)
E
∗
V
CEO(sus)
Collector-Emitter
= 100 mA 60 V
I
C
Sustaining Voltage
(I
= 0)
B
∗
V
V
CE(sat)
EBO
Emitter-base Voltage
(I
= 0)
C
∗
Collector-Emitter
= 1 mA 6 V
I
E
IC = 5 A IB = 0.5 A 0.4 1 V
Saturation Voltage
BE(sat)
∗
Base-Emitter
IC = 5 A IB = -0.5 A 1.3 1.6 V
V
Saturation Voltage
∗
h
FE
f
DC Current Gain IC = 1 A VCE = 2 V
I
= 1.5 A VCE = 0.6 V
C
I
= 2 A VCE = 2 V 40
∗
Transition Frequency IC = 0.5 A VCE = 5 V
T
C
70 100 MHz
100
75
80 150
f = 20 MHz
C
EBO
Emitter-base
Capacitance
C
CBO
Collector-base
Capacitance
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Turn-on Time IC = -0.5 A VCC = -20 V
on
Turn-on Time 0.6 1.2 µs
on
IC = 0.5 A VEB = 5 V
f = 1 MHz
IE = 0 VCB = 10 V
f = 1 MHz
I
= -I
B1
= -50 mA
B2
300 500 pF
40 100 pF
0.6 0.25 µs
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