SGS Thomson Microelectronics BFW43 Datasheet
DESCRIPTION
The BFW43 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. It is
designed for use in amplifiers where high voltage
and high gain are necessary. In particular, its
feature a V
of 150V are specified over a wide
CEO
range of curent.
BFW43
HIGH VOLTAGE AMPLIFIER
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base V oltage (IE= 0) -150 V
CBO
Collector-Emitter V oltage (IB= 0) -150 V
CEO
Emitter-Base Voltage (IC=0) -6 V
EBO
Collect or Current -0. 1 A
I
C
Total Dissipati on at T
tot
Stora ge Temperat u re -55 to 200
stg
Max. Operating Juncti on Temperat ure 200
T
j
at T
amb
case
≤ 25oC
≤ 25oC
0.4
1.4
W
W
o
C
o
C
November 1997
1/5
BFW43
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resistance Junc t io n- Case Max
Thermal Resistance Junction-Ambient Max
125
438
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
V
(BR) CBO
CBO
Collector Cut-of f
Current (I
E
=0)
∗ Collect or- Base
=-100V
V
CE
V
=-100V T
CE
I
=-10µA-150V
C
amb
=125oC
-0.2
-0.03
-10
-10
Break dow n Volt age
=0)
(I
E
V
∗ Collect or- Emitt er
(BR) CEO
I
=-2mA -150 V
C
Break dow n Volt age
=0)
(I
B
V
(BR)EBO
∗ Em itt er-Base
I
=-10µA-6V
E
Break dow n Volt age
=0)
(I
C
V
∗ Co llector-E mitter
CE(sat)
IC=-10mA IB= - 1 mA -0. 1 -0.5 V
Saturation Voltage
V
BE(sat )
∗ Base-Emitt er
IC=-10mA IB= - 1 mA -0. 74 -0.9 V
Saturation Voltage
∗ DC Current Gain IC=-1mA VCE=-10V
h
FE
f
C
EBO
Tr ansition Frequenc y VCE=-10V f=20MHz
T
Emitt er Base
I
=-10mA VCE=-10V
C
=-10µAVCE= -10 V
I
C
T
=-55oC
amb
=-1mA
I
C
=-10mA 60
I
C
IE=0 VEB= - 0. 5 V f = 1MHz 20 25 pF
40
40
85
100
30
50 MHz
Capacit a nc e
C
CBO
Collector Base
IE=0 VCB=-5V f=1MHz 5 7 pF
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤ 1%
nA
µA
MHz
DCCurrent Gain. Collector-emitter SaturationVoltage.
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