SGS Thomson Microelectronics BF721 Datasheet
®
SMALL SIGNAL PNP TRANSISTOR
Type Marking
BF721 721
■ SILICON EPI TAX IA L PLANAR PN P HIGH
VOLTAGE TRANSISTOR
■ SOT-223 PLASTIC PAC KAG E FOR
SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COM PLE M ENT A RY TY P E IS
BF720
BF721
PRELIMINARY DATA
2
3
2
1
APPLICATIONS
■ VIDEO AMPLIFIER CIRC UITS (RGB
SOT-223
CATHODE CURRENT CONTROL)
■ TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -300 V
CBO
Collector-Emitter Voltage (IB = 0) -300 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -100 mA
I
C
Collector Peak Current -200 mA
CM
Total Dissipation at TC = 25 oC 1.4 W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
May 2002
1/4
BF721
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 89.3
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -200 V
V
CB
V
= -200 V TC = 150 oC
CB
V
= -300 V
CB
= -5 V -50 nA
V
EB
= -10 mA -300 V
I
C
-10
-10
-100
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= -100 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
IC = -30 mA IB = - 5 mA -0.6 V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = -30 mA IB = - 5 mA -1.2 V
Saturation Voltage
h
∗ DC Current Gain IC = -25 mA VCE = -20 V 50
FE
f
C
CBO
Transition Frequency IC = -15 mA VCE = -10V f =100 MHz 60 MHz
T
Collector-Base
IE = 0 VCB = -10 V f = 1MHz 6 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -2 V f = 1MHz 22 pF
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
nA
µA
µA
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