SGS Thomson Microelectronics BF421-AP, BF421 Datasheet
®
SMALL S IGNAL PNP TRANSISTOR
Ordering Code Marking Package / Shipment
BF421 BF421 TO-92 / Bulk
BF421-AP BF421 TO-92 / Ammopack
■ SILICON EPI TAX IA L PLANAR PN P HIGH
VOLTAGE TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PC B ASSEMBLY
■ THE NPN COMPL E ME NT ARY TYPE IS
BF420
APPLICATIONS
■ VIDEO AMPLIFIE R CIRCUI T S (RGB
CATHODE CURRENT CONTROL)
■ TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
TO-92
Bulk
BF421
PRELIMINARY DATA
TO-92
Ammopack
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -300 V
CBO
Collector-Emitter Voltage (IB = 0) -300 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -500 mA
C
Collector Peak Current (tp < 5ms) -600 mA
CM
Total Dissipation at TC = 25 oC 830 mW
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
February 2003
1/5
BF421
THERMAL DATA
R
R
thj-amb
thj-Case
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Case Max
150
50
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -200 V
V
CB
V
= -200 V TC = 150 oC
CB
V
= -300 V
CB
= -5 V -50 nA
V
EB
I
= -10 mA -300 V
C
-10
-10
-100
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µA
I
C
-300 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -100 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
∗ Collector-Emitter
IC = -30 mA IB = -5 mA -0.6 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitter
IC = -30 mA IB = -5 mA -1.2 V
Saturation Voltage
∗ DC Current Gain IC = -25 mA VCE = -20 V 50
h
FE
f
C
Transition Frequency IC = -10 mA VCE = -10 V f =100MHz 60 MHz
T
Reverse Capacitance IE = 0 VCB = -30 V f = 1MHz 1.6 pF
RE
∗ Pulsed: Pulse duration ≤ 300 µs, duty cycle ≤ 2 %
nA
µA
µA
2/5
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