SGS Thomson Microelectronics BF420-AP, BF420 Datasheet

®
SMALL SIGNAL NPN TRANSI STOR
Ordering Code Marking Package / Shipment
BF420 BF420 TO-92 / Bulk BF420-AP BF420 TO-92 / Ammopack
SILICON EPI TAX IA L PLANAR N PN HIGH
VOLTAGE TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROU GH-HOL E PCB ASSEMBL Y
THE PNP COMPLEMENTARY TYPE IS
APPLICATIONS
VIDEO AMPLIFIER CIRC UITS (RGB
CATHODE CURRENT CONTROL)
TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
TO-92
Bulk
BF420
PRELIMINARY DATA
TO-92
Ammopack
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V V V
I P
T
Collector-Base Voltage (IE = 0) 300 V
CBO
Collector-Emitter Voltage (IB = 0) 300 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 500 mA
I
C
Collector Peak Current (tp < 5 ms) 600 mA
CM
Total Dissipation at TC = 25 oC 830 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
February 2003
1/5
BF420
THERMAL DATA
R
R
thj-amb
thj-Case
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Case Max
150
50
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
Collector Cut-off Current (I
= 0)
E
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 200 V
V
CB
V
= 200 V TC = 150 oC
CB
V
= 300 V
CB
= 5 V 50 nA
V
EB
I
= 10 mA 300 V
C
10 10
100
Breakdown Voltage (I
= 0)
B
V
(BR)CBO
Collector-Base
= 100 µA
I
C
300 V Breakdown Voltage (I
= 0)
E
V
(BR)EBO
Emitter-Base
= 100 µA
I
E
5V Breakdown Voltage (I
= 0)
C
V
Collector-Emitter
CE(sat)
IC = 30 mA IB = 5 mA 0.6 V
Saturation Voltage
V
Base-Emitter
BE(sat)
IC = 30 mA IB = 5 mA 1.2 V
Saturation Voltage
DC Current Gain IC = 25 mA VCE = 20 V 50
h
FE
f
C
CBO
Transition Frequency IC = 10 mA VCE = 10 V f =20 MHz 60 MHz
T
Collector-Base
IE = 0 VCB = 10 V f = 1MHz 6 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = 2 V f = 1MHz 22 pF
Capacitance
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
nA
µA µA
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