SGS Thomson Microelectronics BF3510TV Datasheet
FULL 50-60Hz RECTIFICATIONBRIDGE
MAINPRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
(max) 1.30V
V
F
FEATURESAND BENEFITS
COMPACT ISOTOP DESIGN COMPATIBLE
WITH FASTDIODESANDTRANSISTORS.
EXCELLENTTHERMAL TRANSFERBETWEEN
JUNCTIONAND HEATSINK
UL PENDING
DESCRIPTION
The Bridges series from ST Microelectronics has
been designedto allowa betterstandardizationof
packagesonboardsprincipallydesignedwithISOTOP packages. The insulated package of the
bridge will be able to sit on heatsink with other
components. Single phase and 3-phase high
power SMPS,UPS, MOTORDRIVES and WELDING equipment will primarily find advantage in
theseindustry packageproducts.
35 A
1000 V
BF3510TV
PRELIMINARY DATASHEET
+
-
+
-
ISOTOP
TM
ABSOLUTERATINGSAND ELECTRICALCHARACTERISTICS (per diodeunless specified)
Symbol Parameter Value Unit
V
RRM
V
RSM
total Averageforward current Tc = 80°Csinusoidal 35 A
I
F(AV)
I
FSM
Repetitivepeak reversevoltage 1000 V
Non repetitivepeak reversevoltage 1000 V
Surgenon repetitiveforward current
300 A
50HzJEDEC method
2
I
.t Fusing 660 A2.s
T
stg
Storagetemperaturerange - 55 to + 150 °C
Tj Maximumoperatingjunction temperature 150 °C
Pmaxtotal Totolpower dissipation 50 W
TM :ISOTOPis atrademark of STMicroelectronics.
August 1999 -Ed: 2A
1/3
BF3510TV
THERMALRESISTANCES
Symbol Parameter Value Unit
Rth (j-c) Junctionto case total 0.5 °C/W
ELECTRICALCHARACTERISTICS(Per diode)
STATICCHARACTERISTICS
Symbol Parameter TestConditions Min. Typ. Max. Unit
* Reverseleakage
I
R
current
VR=0.8 V
δ <2%
tp = 5ms
V
F**
Forwardvoltage
drop
IF=35A
δ <2%
tp = 380µs
Pulsetest : * tp = 5 ms, duty cycle< 2 %
**tp = 380 µs, dutycycle < 2 %
Forone diode: Pcond =1.02 x I
Tj= Pcondx 4 x R
F(AV)
th(j-c)
+ 0.008x I
+Tc
RRM
2
F(RMS)
=25°C10
T
j
T
= 125°C 0.2 mA
j
µ
A
Tj=25°C 1.4 V
T
= 125°C 1.3 V
j
2/3
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