HIGHVOLTAGE VIDEO AMPLIFIERS
DESCRI PTIO N
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case.Theyareparticularlydesignedforvideooutput
stages in CTV and MTV sets, class A audio output
stagesand drivers for horizontal deflection circuits.
BF257
BF258-BF259
TO-39
ABSOLUTE MAX IMU M RATI NGS
Symbol Paramet e r
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
Collector-base Voltage (IE= 0) 160 250 300 V
Collector-emitter Voltage (IB= 0) 160 250 300 V
Emitter-base Voltage (IC=0) 5 V
Collector Current 100 mA
Collector Peak Current 200 mA
Total Power Dissipation at T
Storage Temperature – 55 to 200 °C
Junction Temperature 200 °C
j
amb
INTERNAL SCHEMATIC DIAGRAM
Val ue
BF257 BF258 BF259
≤ 50 °C5W
Unit
October 1988
1/5
BF257-BF258-BF259
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS(T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
30
175
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CB O
V
(BR) CB O
V
(BR)CE O
V
(BR) E B O
V
CE (sat)
h
FE
f
T
C
re
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff Current
(I
=0)
E
Collector-base
Breakdown Voltage
(IE=0)
* Collector-emitter
Breakdown Voltage
(I
=0)
B
for BF257
for BF258
for BF259
I
=100µA
C
I
=10mA
C
= 100 V
V
CB
V
= 200 V
CB
VCB= 250 V
for BF257
for BF258
for BF259
for BF257
for BF258
for BF259
160
250
300
160
250
300
Emittter-base
I
Breakdown Voltage
(I
=0)
C
* Collector-emitter
Saturation Voltage
=100µA5 V
E
I
=30mA IB=6mA 1 V
C
* DC Current Gain IC=30mA VCE=10V 25
Transition Frequency IC=15mA VCE=10V 90 MHz
Reverse Capacitance IC=0
f=1MHz
VCE=30V
3pF
50
50
50
°C/W
°C/W
nA
nA
nA
V
V
V
V
V
V
DC Current Gain.
2/5
BF257-BF258-BF259
Collector Cutoff Current. Collector-base Capacitance.
Transition Frequency. Power Rating Chart.
SafeOperating Area.
3/5
BF257-BF258-BF259
TO39 MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
o
L45
(typ.)
4/5
I
H
G
F
L
DA
E
B
P008B
BF257-BF258-BF259
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as critical components inlife supportdevicesor systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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