SGS Thomson Microelectronics BF259, BF258, BF257 Datasheet
HIGHVOLTAGE VIDEO AMPLIFIERS
DESCRI PTIO N
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case.Theyareparticularlydesignedforvideooutput
stages in CTV and MTV sets, class A audio output
stagesand drivers for horizontal deflection circuits.
BF257
BF258-BF259
TO-39
ABSOLUTE MAX IMU M RATI NGS
Symbol Paramet e r
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
Collector-base Voltage (IE= 0) 160 250 300 V
Collector-emitter Voltage (IB= 0) 160 250 300 V
Emitter-base Voltage (IC=0) 5 V
Collector Current 100 mA
Collector Peak Current 200 mA
Total Power Dissipation at T
Storage Temperature – 55 to 200 °C
Junction Temperature 200 °C
j
amb
INTERNAL SCHEMATIC DIAGRAM
Val ue
BF257 BF258 BF259
≤ 50 °C5W
Unit
October 1988
1/5
BF257-BF258-BF259
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS(T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
30
175
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CB O
V
(BR) CB O
V
(BR)CE O
V
(BR) E B O
V
CE (sat)
h
FE
f
T
C
re
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff Current
(I
=0)
E
Collector-base
Breakdown Voltage
(IE=0)
* Collector-emitter
Breakdown Voltage
(I
=0)
B
for BF257
for BF258
for BF259
I
=100µA
C
I
=10mA
C
= 100 V
V
CB
V
= 200 V
CB
VCB= 250 V
for BF257
for BF258
for BF259
for BF257
for BF258
for BF259
160
250
300
160
250
300
Emittter-base
I
Breakdown Voltage
(I
=0)
C
* Collector-emitter
Saturation Voltage
=100µA5 V
E
I
=30mA IB=6mA 1 V
C
* DC Current Gain IC=30mA VCE=10V 25
Transition Frequency IC=15mA VCE=10V 90 MHz
Reverse Capacitance IC=0
f=1MHz
VCE=30V
3pF
50
50
50
°C/W
°C/W
nA
nA
nA
V
V
V
V
V
V
DC Current Gain.
2/5
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