SGS Thomson Microelectronics BDY90 Datasheet
HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDY90 is a silicon epitaxial planar NPN
power transistors in Jed ec TO-3 metal case. T hey
are intented for use in switching and linear
applications in military and industrial equipment.
BDY90
1
2
TO-3
ABSOL UT E MAXIMU M RATINGS
V
V
V
V
I
P
T
Collector-base Voltage (IE = 0) 120 V
CBO
Collector-emitter Voltage (VBE = -1.5V) 120 V
CEV
Collector-emitter Voltage (IB = 0) 100 V
CEO
Emitter-base Voltage (IC = 0) 6 V
EBO
Collector Current 10 A
I
C
Collector Peak Current (repetitive) 15 A
CM
Base Current 2 A
I
B
Total Dissipation at Tc ≤ 25 oC60W
tot
Storage Temperature -65 to 175
stg
Max. Operating Junction Temperature 175
T
j
INTERNAL SCHEMATIC DIAGRAM
Value
o
C
o
C
June 1997
1/4
BDY90
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
V
V
T
V
V
CE
CE
case
CE
EB
= V
CBO
= V
CEV
= 150 oC
= V
CEV
= 6 V
1mA
1
3
1mA
I
= 100 mA 100 V
C
Sustaining Voltage
(I
= 0)
B
V
∗ Collector-emitter
CE(sat)
Saturation Voltage
V
∗ Base-emitter
BE(sat)
Saturation Voltage
hFE∗ DC Current Gain IC = 1 A VCE = 2 V
f
Transition-Frequency IC = 0.5 A VCE = 5 V
t
IC = 5 A IB = 0.5 A
I
= 10 A IB = 1 A
C
IC = 5 A IB = 0.5 A
I
= 10 A IB = 1 A
C
I
= 5 A VCE = 5 V
C
I
= 10 A VCE = 5 V
C
30
30
20
0.5
1.5
1.2
1.5
120
70 MHz
f = 5 MHz
t
Turn-on Time IC = 5 A IB1 = 0.5 A
on
V
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time IC = 5 A IB1 = -IB2 = 0.5 A
s
Fall Time 0.2 µs
t
f
V
= 30 V
CC
= 30 V
CC
0.35 µs
1.3 µs
mA
mA
V
V
V
V
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