SGS Thomson Microelectronics BDX54F Datasheet
®
■ STMicroelectronics P REF ERRED
SALESTYPE
■ MONOLIT HIC DA RLING T O N
CONFIGU R ATIO N
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
BDX54F
SILICON PNP POWER
DARLINGTON TRANSISTOR
3
2
1
DESCRIPTION
The BDX54F is a silicon Epitaxial-Base PNP
TO-220
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 160 V
CBO
Collector-Emitter Voltage (IB = 0) 160 V
CEO
Emitter-base Voltage (IC = 0) 5 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 12 A
CM
Base Current 0.2 A
I
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
60 W
o
C
o
C
January 2000
1/4
BDX54F
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 80 V 0.5 mA
V
CE
= 160 V 0.2 mA
V
CB
= 5 V 5 mA
V
EB
I
= 50 mA 160 V
C
Sustaining Voltage
(I
= 0)
B
∗ Collector-emitter
V
CE(sat)
IC = 2 A IB =10 mA 2 V
Saturation Voltage
V
∗ Base-emitter
BE(sat)
IC = 2 A IB =10 mA 2.5 V
Saturation Voltage
∗ DC Current Gain IC = 2 A VCE = 5 V
h
FE
VF∗ Parallel Diode Forward
I
= 3 A VCE = 5 V
C
IF = 2 A 2.5 V
500
150
Voltage
∗ Small Signal Current
h
fe
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
IC = 0.5 A
f = 1MHz V
= 2 V 20
CE
2/4
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