SGS Thomson Microelectronics BDX54C, BDX54B, BDX53B, BDX53C Datasheet
BDX53B / BDX53C
COMPLEMENTARY SILICON POWER
■ STMicroelectronicsPREFERRED
SALESTYPES
APPLICATIONS
■ AUDIO AMPLIFIERS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54Crespectively.
BDX54B / BDX54C
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX53 B BDX 53C
PNP BDX54B BDX54C
V
V
V
I
P
T
For PNP types voltage and current values are negative.
September 1999
Coll ect o r -B a s e V o lt age (IE= 0) 80 100 V
CBO
Coll ect o r -E mitt er Voltage ( IB= 0) 80 100 V
CEO
Emitter -base V o lt age (IC=0) 5 V
EBO
Coll ect o r Curr e nt 8 A
I
C
Collector Peak Current (repetitive) 12 A
CM
Base Current 0.2 A
I
B
Total Dissipation at Tc≤ 25 oC
tot
St orage Tempe rature -65 to 15 0
stg
Max. Operating Junction Temperature 150
T
j
60 W
o
C
o
C
1/6
BDX53B - BDX53C - BDX54B - BDX54C
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junction-cas e Max
Ther mal Resist ance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus )
V
CE(sat)
Collec to r Cut-of f
Current ( I
E
=0)
Collec to r Cut-of f
Current ( I
B
=0)
Emitter C ut-off Current
=0)
(I
C
∗ Collector-Emitter
Sust aining Voltage
=0)
(I
B
∗ Collector-e mit ter
for BDX53B/54B V
for BDX53C/54C V
for BDX53B/54B V
for BDX53C/54C V
V
=5V 2 mA
EB
I
=100mA forBDX5 3B/54B
C
for
=80V
CB
=100V
CB
=40V
CE
=50V
CE
BDX53 C/ 5 4C
80
100
0.2
0.2
0.5
0.5
IC=3A IB=12 mA 2 V
Sat uration Volt age
V
BE(sat)
∗ Base-emitter
IC=3A IB=12 mA 2.5 V
Sat uration Volt age
h
FE
V
DC Curre nt Gai n I
∗
∗ Parallel-diod e For wa r d
F
Voltage
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
=3A VCE= 3 V 750
C
IF=3A
I
=8A
F
1.8
2.5
2.5 V
mA
mA
mA
mA
V
V
V
SafeOperating Area DeratingCurve
2/6
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