SGS Thomson Microelectronics BDW94CFP, BDW93CFP Datasheet
COMPLEMENTARY SILICON POWER
■ SGS-THOMSONPREFERRED SALESTYPES
■ MONOLITHIC DARLINGTON
CONFIGURATION
■ COMPLEMENTARYPNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ FULLYMOLDED ISOLATEDPACKAGE
■ 2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS
■ LINEARAND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP, is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
and is mounted in TO-220FP fully molded
isolated package. It is intented for use in power
linear and switching applications.
The complementaryPNPtype is the BDW94CFP.
BDW93CFP
BDW94CFP
DARLINGTON TRANSISTORS
3
2
1
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
Typ. = 10 KΩ R2Typ. = 150 Ω
R
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93CFP
PNP BDW 94C F P
V
V
I
P
T
For PNP types voltage and current values are negative.
April 1998
Collect or- B as e V o lt age (IE= 0 ) 100 V
CBO
Collector-Emitter Voltage ( IB= 0) 100 V
CEO
Collect or Current 12 A
I
C
Collect or Peak Current 15 A
CM
Base Current 0.2 A
I
B
Tot al Dissipat ion at Tc≤ 25 oC33W
tot
Storage Temperature -65 to 150
stg
Max. Operating Juncti on Temperatu re 150
T
j
o
C
o
C
1/4
BDW93CFP / BDW94CFP
THERMAL DATA
R
thj-case
Ther mal Resistance J u nct ion-cas e 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
E
=0)
Collector Cut-off
Current (I
B
=0)
Emit ter Cut -off Current
=0)
(I
C
∗ Collector-Emitter
V
=100V
CB
=100V T
V
CB
V
=80V 1 mA
CE
V
=5V 2 mA
EB
I
= 10 0 mA 100 V
C
case
=150oC
100
5
Sust aining Voltag e
=0)
(I
B
V
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
∗ Collect or-E mitter
CE(sat)
Saturation Voltage
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Current G ain IC=3A VCE=3V
FE
V
* Pa rallel- d iode Forward
F
Volt age
h
Small Signal Curr ent
fe
Gain
IC=5A IB=20mA
=10A IB=100mA
I
C
IC=5A IB=20mA
I
=10A IB=100mA
C
=5A VCE=3V
I
C
=10A VCE=3V
I
C
IF=5A
I
=10A
F
IC = 1 A VCE=10V
f=1MHz 20
1000
750
100
1.3
1.8
2
3
2.5
4
20000
2
4
µA
mA
V
V
V
V
V
V
Safe Operating Area
2/4
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