SGS Thomson Microelectronics BDW93B Datasheet
BDW93C
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARYPNP - NPN DEVICES
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTERDIODE
APPLICATIONS
■ LINEARANDSWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switchingapplications.
The complementaryPNPtype is BDW94C.
Also BDW94B is a PNP type.
BDW94B/BDW94C
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93C
PNP BDW94B BDW94C
V
V
I
P
T
For PNP types voltage and current values are negative.
May 1999
Collector-Base Voltag e (IE=0) 80 100 V
CBO
Collect or-Emitter Voltage (IB=0) 80 100 V
CEO
Collector Current 12 A
I
C
Collector Peak Current 15 A
CM
Base Current 0.2 A
I
B
Tot al D is sip at ion at Tc≤ 25 oC
tot
Sto rage Tem pe rature -65 to 150
stg
Max. Operat in g Junct ion Tem per at ure 150
T
j
80 W
o
C
o
C
1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
R
thj-case
Ther mal Resistan c e Junction- case 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
CBO
Collec t or Cut-of f
Current (I
E
=0)
for BD W 94B V
for BD W 93C/94C V
=150oC
T
case
for BD W 94B V
for BD W 93C/94C V
I
CEO
I
EBO
V
CEO(sus)
Collec t or Cut-of f
Current (I
B
=0)
Emitt er Cut-off Current
=0)
(I
C
∗ Collec t or- Emit t er
Sust aining Vo lt age
=0)
(I
B
V
∗ Collec t or -Emit t er
CE(sat)
Saturation Voltage
V
∗ Base-Emi tter
BE(sat)
Saturation Voltage
h
∗ DC Curr ent Gain IC=3A VCE=3V
FE
V
* Parallel-diode F orward
F
Voltage
h
Small Signal Curren t
fe
Gain
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
for BD W 94B V
for BD W 93C/94C V
V
=5V 2 mA
EB
I
=100mA
C
for BD W 94B
for BD W 93C/94C
IC=5A IB=20mA
=10A IB=100mA
I
C
IC=5A IB=20mA
=10A IB=100mA
I
C
=5A VCE=3V
I
C
=10A VCE=3V
I
C
IF=5A
=10A
I
F
IC=1A VCE=10V
f=1MHz 20
=80V
CB
=100V
CB
=80V
CB
=100V
CB
=80V
CB
=100V
CB
80
100
1000
750
100
1.3
1.8
100
100
5
5
1
1
2
3
2.5
4
20K
2
4
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
2/6
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