SGS Thomson Microelectronics BD912, BD911, BD910, BD909 Datasheet
BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronicsPREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
powerlinear and switching applications.
The complementary PNP types are BD910 and
BD912respectively.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD909 BD911
PNP BD910 BD912
V
V
V
I
E,IC
P
T
For PNPtypes voltage and current values are negative.
Coll ect o r -B a s e V o lt age (IE= 0) 80 100 V
CBO
Coll ect o r -E mitter Volt a ge (IB= 0) 80 100 V
CEO
Emit ter-B ase Voltage (IC=0) 5 V
EBO
Coll ect o r Curr e nt 15 A
Base Current 5 A
I
B
Total Dissipation at T
tot
St orage T e m pe r ature -65 to 15 0
stg
Max. Operating Junction Temperature 150
T
j
c
≤ 25
o
C
90 W
o
C
o
C
October 1999
1/6
BD909 / BD910 / BD911 / BD912
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-cas e Max 1.4
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEO
I
EBO
V
CEO(sus )
V
CE(sat)
V
BE(sat)
Collec to r Cut-of f
Current (I
E
=0)
Collec to r Cut-of f
Current (I
B
=0)
Emitter Cut-off Current
=0)
(I
C
∗ Collector-E mitte r
Sust aining Volta ge
=0)
(I
B
∗ Collector-Emitte r
Sat uration Volt age
∗ Base-Emitter
BD909 / 91 0
for
for BD911 / 912 V
=150oC
T
case
for BD909 / 910 V
for BD911 / 912 V
BD909 / 91 0
for
for BD911 / 912 V
V
=5V 1 mA
EB
I
=100mA forBD909/ 910
C
V
=80V
CB
= 100 V
CB
=80V
CB
= 100 V
CB
=40V
V
CE
=50V
CE
for BD 911/91 2
80
100
IC=5A IB=0.5A
I
=10A IB=2.5A
C
IC=10A IB= 2.5A 2.5 V
500
500
5
5
1
1
1
3
Sat uration Volt age
∗ Base-Emitter Voltage IC=5A VCE=4V 1.5 V
V
BE
h
FE
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
DC Current Gain I
∗
Tr ansition fr equ ency IC=0.5A VCE=4V 3 MHz
T
=0.5A VCE=4V
C
=5A VCE=4V
I
C
=10A VCE=4V
I
C
40
15
250
150
5
µA
µA
mA
mA
mA
mA
V
V
V
V
SafeOperating Area DeratingCurves
2/6
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