SGS Thomson Microelectronics BD139, BD135 Datasheet
BD135
■ STMicroelectronicsPREFERRED
SALESTYPES
DESCRIPTION
The BD135 and BD139 are silicon epitaxial
planar NPN transistors in Jedec SOT-32 plastic
package, designed for audio amplifiers and
drivers utilizing complementary or quasi
compementarycircuits.
The complementary PNP types are BD136 and
BD140 respectively.
BD139
NPN SILICON TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Val u e Uni t
BD135 BD1 39
V
V
V
I
P
P
T
Collector-Base Voltage (IE=0) 45 80 V
CBO
Collector-Emitter Voltage (IB=0) 45 80 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collector Current 1.5 A
I
C
Collector Peak Current 3 A
CM
Base Current 0.5 A
I
B
Tot al Dissipation at Tc≤ 25oC
tot
Tot al Dissipation at T
tot
Sto rage Tempe r ature -65 to 150
stg
Max. Operatin g Ju nct ion T emper ature 150
T
j
amb
≤ 25oC
12.5 W
1.25 W
o
C
o
C
May 1999
1/4
BD135 / BD139
THERMAL DATA
R
thj-case
Ther mal Resistan ce J unc t ion-cas e M ax 10
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collec t or Cut-off
Current (I
E
=0)
Emitt er Cut -of f Current
=0)
(I
C
∗ Collec t or- Emit t er
Sust aining V o lt age
∗ Collec t or -Emit t er
V
=30V
CB
=30V TC=125oC
V
CB
V
=5V 10 µA
EB
0.1
10
IC=30mA
for BD135
for BD139
45
80
IC=0.5A IB=0.05A 0.5 V
Saturation Voltage
∗ Base-Emi tter Voltage IC=0.5A VCE=2V 1 V
V
BE
h
∗ DC Current Gain IC=5mA VCE=2V
FE
h
hFEGroups IC=150mA VCE=2V
FE
=0.5A VCE=2V
I
C
=150mA VCE=2V
I
C
25
25
40 250
for BD139 grou p 10 63 160
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
µA
µA
V
V
Safe Operating Area
2/4
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