SGS Thomson Microelectronics BC858, BC857 Datasheet

SMALL SIGNAL PNP TRANSISTORS

Type Marking

BC857A 3E
BC857B 3F
BC858A 3J
BC858B 3K

■ SILICONEPITAXIALPLANAR PNP

TRANSISTORS

■ MINIATUREPLASTIC PACKAGEFOR

APPLICATIONIN SURFACE MOUNTING
CIRCUITS

■ VERYLOW NOISE AF AMPLIFIER

■ NPNCOMPLEMENTS FORBC857 IS BC847

BC857
BC858

2

3

1

SOT-23

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

BC857 BC858

V
V
V
V

I
I
I
P

T

Collector-Emitter Voltage (VBE=0) -50 -30 V

CES

Collect or- B as e V o lt age (IE=0) -50 -30 V

CBO

Collector-Emitter Voltage (IB=0) -45 -30 V

CEO

Emitter-Base Voltage (IC=0) -5 V

EBO

Collect or Cur rent -0. 1 A

I

C

Collect or P ea k Current -0. 2 A

CM

Base Peak Current -0. 2 A

BM

Emitter Peak Current -0.2 A

EM

Tot al Dissipat ion at Tc=25oC 300 mW

tot

Storage Temperature -65 t o 150

stg

Max. Operating Junction Temperature 150

T

j

o

C

o

C

October 1997

1/5

BC857/BC858

THERMAL DATA

R

thj-amb

R

thj-SR

• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm

Thermal Resistance Junction-Ambient Max

•

•

Ther mal Resistance Junct ion-Subst rate Max

420
330

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test C ondition s Min. Typ. Max. Unit

I

V

(BR)CES

V

(BR) CBO

V

(BR) CEO

V

(BR)EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

C

CBO

f

Collector Cut- of f
Current (I

E

=0)

∗ Collector-Em it t er

Break dow n Voltage

=0)

(V

BE

∗ Co llec tor-Bas e

Break dow n Voltage

=0)

(I

E

∗ Co llec tor-Em it t er

Break dow n Voltage

=0)

(I

B

Emitt er-Base
Break dow n Voltage

=0)

(I

C

∗ Collector-Em it t er

Saturation Voltage

∗ Base-Emitt er

Saturation Voltage

∗ Base-Emitt er O n

Volt age
DC C ur rent Gain IC=-10µAVCE=-5V

FE

Tr ansition Frequency IC=-10mA VCE= - 5 V f = 100MHz 150 MHz

T

Collector Base

CB

=-30V

V

CE

V

=-30V T

CE

I

=-10µA

C

for B C857
for B C858

I

=-10µA

C

for B C857
for B C858

I

=-2mA

C

for B C857
for B C858

I

=-10µA

C

for B C857
for B C858

IC=-10mA IB= -0.5 mA

=-100mA IB=-5mA

I

C

IC=-10mA IB= -0.5 mA

=-100mA IB=-5mA

I

C

IC=-2mA VCE=-5V
I

=-10mA VCE=-5V

C

for groupA
for groupB

=-2mA VCE=-5V

I

C

for groupA
for groupB

amb

=150oC

-50

-30

-50

-30

-45

-30

-6

-5

-0.09

-0.25

-0.75

-0.9

-0.6 -0.66

-0.72

90

150

110
200

180
290

IE=0 VCB= -10 V f = 1 MHz 6 pF

-15

-5

-0.3

-0.65

-0.75

-0.82

220
450

Capacit a nc e

NF Noise Fig ure V

∗

Pulsed: Pulse duration = 300 µs,duty cycle ≤ 2%

=-5V IC=-0.2mA f=1KHz

CE

∆f = 200 Hz R

=2KΩ

G

2

1.2

10

4

nA
µA

V
V

V
V

V
V

V
V

V
V

V
V

V
V

dB
dB

2/5