SGS Thomson Microelectronics BC636-AP, BC636 Datasheet
BC636
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ THE NPN COMPLEMENTARY TYPE IS
BC635
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
®
INTER NAL SCH E M ATI C DIAG RA M
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CER
Collector-Emitter Voltage (RBE = 1KΩ)
-45 V
V
CEO
Collector-Emitter Voltage (IB = 0) -45 V
V
CES
Collector-Emitter Voltage (VBE = 0) -45 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -1 A
I
CM
Collector Peak Current -1.5 A
P
tot
Total Dissipation at T
amb
= 25 oC1W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
Ordering Code Marking Package / Shipment
BC636 BC636 TO-92 / Bulk
BC636-AP BC636 TO-92 / Ammopack
TO-92
Bulk
TO-92
Ammopack
1/5
THERMAL DATA
R
thj-amb
•
R
thj-Case
•
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Case Max
125
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V -0.1 µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -0.1 µA
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA -45 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -500 mA IB = -50 mA -0.5 V
V
V
BE(on)
∗ Base-Emitter On
Voltage
IC = -500 mA VCE = -2 V -1 V
h
FE
DC Current Gain IC = -5 mA VCE = -2 V
I
C
= -150 mA VCE = -2 V
I
C
= -500 mA VCE = -2 V
25
40
25
250
f
T
Transition Frequency IC = -10 mA VCE = -5 V f = 50MHz 100 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
BC636
2/5
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