SGS Thomson Microelectronics BC557B-AP Datasheet
BC557B
SMALL SIGNAL PNP TRANSISTOR
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ THE NPN COMPLEMENTARY TYPE IS
BC547B
■
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
®
INTER NAL SCH E M ATI C DIAG RA M
March 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (IE = 0) -50 V
V
CEO
Collector-Emitter Voltage (IB = 0) -45 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -100 mA
I
CM
Collector Peak Current (tp < 5 ms) -200 mA
P
tot
Total Dissipation at TC = 25 oC 500 mW
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
TO-92
Bulk
TO-92
Ammopack
Ordering Code Marking Package / Shipment
BC557B BC557B TO-92 / Bulk
BC557B-AP BC557B TO-92 / Ammopack
1/5
THERMAL DATA
R
thj-amb
•
R
thj-Case
•
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Case Max
250
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V TC = 150 oC
-1 -15
-4
nA
µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -100 nA
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA -45 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -10 mA IB = -0.5 mA
I
C
= -100 mA IB = -5 mA
-0.06
0.18
-0.3
-0.65
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -10 mA IB = -0.5 mA
I
C
= -100 mA IB = -5 mA
-0.75
-0.93
V
V
V
BE(on)
∗ Base-Emitter On
Voltage
IC = -2 mA VCE = -5 V
I
C
= -10 mA VCE = -5 V
-0.6 -0.65 -0.75
-0.82
V
V
h
FE
DC Current Gain IC = -2 mA VCE = -5 V 220 475
f
T
Transition Frequency IC = -10 mA VCE = -5 V f = 100MHz 100 MHz
C
CBO
Collector-Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz 3 pF
C
EBO
Emitter-Base
Capacitance
IC = 0 VEB = -0.5 V f = 1 MHz 10 pF
NF Noise Figure
V
CE
= -5 V IC = -200 µA f = 1KHz
∆f = 200 Hz R
G
= 2 KΩ
210dB
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
BC557B
2/5
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