SGS Thomson Microelectronics BC394 Datasheet
DESCRIPT ION
The BC394is asiliconplanar epitaxial NPNtransistorinJedec TO-18metalcase,designed forgeneral
purpose high-voltage and video amplifier applications.
The complementary PNP type is the BC393.
INTERN AL SCHEMAT IC DI AG R AM
BC394
HIGH VOLTAGE AMPLIFIER
TO-18
ABSOLUTE M AXI MUM RAT IN G S
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
January 1989
Collector-base Voltage (IE=0) 180 V
Collector-emitter Voltage (IB=0) 180 V
Emitter-base Voltage (IC=0) 6 V
Collector Current 100 mA
Total Power Dissipation at T
at T
Storage Temperature – 55 to 200 °C
Junction Temperature 200 °C
j
amb
case
≤ 25 °C
≤ 25 °C
0.4
1.4
W
W
1/5
BC394
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Therm al Resistance Junction-case
Therm al Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
125
440
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CB O
V
(B R) CBO
V
(BR) CEO
Collector Cutoff Current
(IE = 0) VCB=100V
V
CB
Collector-base Breakdown
Voltage (I
= 0) IC=100µA 180 V
E
* Collector-emitter Breakdown
=100V T
amb
=150°C
50
50
Voltage (IB = 0) IC= 10 mA 180 V
V
(BR) EBO
Emitter-base Breakdown
Voltage (IC = 0) IE=100µA6 V
V
CE (sat) *
V
BE ( sat) *
h
FE
f
T
C
CBO
* Pulsed : pulse duration = 300 µs, duty c ycle = 1 % .
Collector-emitter Saturation
Voltage IC=10mA
I
=50mA
C
=1mA
I
B
I
=5mA
B
200
400
Base-emitter Saturation
Voltage IC=10mA
IC=50mA
* DC Curent Gain IC=1mA
I
=10mA
C
IB=1mA
IB=5mA
=10V
V
CE
V
=10V 30
CE
750
850
85
100
Transition frequency IC=10mA VCE= 10 V 50 95 MHz
Collector-base
Capacitance I
=0
E
f = 1 MHz
VCB=10V
5pF
300 mV
900 mV
°C/W
°C/W
nA
µA
mV
mV
DC Current. Collector-emitter Saturation Voltage.
2/5
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