SGS Thomson Microelectronics BC393 Datasheet
DESCRI PTION
The BC393is asilicon planarepitaxial PNPtransistorinJedecTO-18metal case,designed forgeneral
purpose high-voltage and video amplifier applications.
The complementary NPN type is the BC394.
INTERN AL SCHEMAT IC DI AG R AM
BC393
HIGH VOLTAGE AMPLIFIER
TO-18
ABSOLUTE M AXI MUM RAT IN G S
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
January 1989
Collector-base Voltage (IE=0) –180 V
Collector-emitter Voltage (IB=0) –180 V
Emitter-base Voltage (IC=0) –6 V
Collector Current – 100 mA
Total Power Dissipation at T
at T
Storage Temperature – 55 to 200 °C
Junction Temperature 200 °C
j
amb
case
≤ 25 °C
≤ 25 °C
0.4
1.4
W
W
1/5
BC393
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
125
440
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CB O
V
(B R) CBO
Collector Cutoff Current
(I
= 0) VCB=–100V
E
VCB= – 100 V T
Collector-base Breakdown
amb
=150°C
50
50
Voltage (IE = 0) IC=–10µA–180 V
V
(BR) CEO
V
(BR) EBO
V
V
* Pulsed : pulse duration = 300 µs, dut y cycle = 1 %.
* Collector-emitter B reakdown
Voltage (I
= 0) IC=– 2mA – 180 V
B
Emiter-base Breakdown
CE (sat) *
Voltage (I
Collector-emitter Saturation
= 0) IE=–10µA–6 V
C
Voltage IC=–10mA
I
BE ( sat) *
Base-emitter Saturation
Voltage I
IC=–50mA
h
* DC Curent Gain IC=–1mA
FE
IC=–10mA
f
T
C
CBO
Transition frequency IC= – 1 0 mA VCE= – 1 0 V 50 95 MHz
Collector-base
Capacitance IE=0
f = 1 MHz
=–50mA
C
=–10mA
C
=–1mA
I
B
I
=–5mA
B
IB=–1mA
IB=–5mA
VCE=–10V
VCE=–10V 50
VCB=–10V
–100
–300 mV
–230
–750
–900 mV
–850
85
100
47pF
°C/W
°C/W
nA
µA
mV
mV
DC Current Gain. Collector-emitter Saturation Voltage.
2/5
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