SGS Thomson Microelectronics BC161 Datasheet
GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC161 is a silicon planar epitaxial PNP
transistors in Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switchingapplicationup to 1A.
The complementaryNPNtypeis the BC141.
BC161
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) -60 V
CBO
Collector-Emitter Voltage (IB=0) -60 V
CEO
Emitter-Base V oltage (IC=0) -5 V
EBO
Collect or Current -1 A
I
C
Base Current -0.1 A
I
B
Total Dissipati on at T
tot
Stora ge Tem perat u re -55 to 175
stg
Max. Operati ng Junct ion Tem per at u r e 175
T
j
at T
amb
case
≤ 45oC
≤ 45oC
0.65
3.7
W
W
o
C
o
C
November 1997
1/5
BC161
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n-Cas e Max
Thermal Resistance Junction-Ambient Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR) CBO
CES
Collector C ut -off
Current (V
BE
∗ Collect or- Base
=0)
=-60V
V
CE
V
=-60V T
CE
I
=-100µA-60V
C
amb
=150oC
-100
-100nAµA
Break dow n Voltage
=0)
(I
E
V
∗ Collect or- Emitter
(BR) CEO
I
=-10mA -60 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
∗ Emitt er-Base
I
=-100µA-5V
E
Break dow n Voltage
=0)
(I
C
V
∗ Co llector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter O n
BE(on)
IC=-100mA IB=-10mA
=-500mA IB=-50mA
I
C
=-1A IB= - 100 mA
I
C
IC=-1A VCE= -1 V -1 -1.7 V
-0.1
-0.35
-0.6 -1
Volt age
∗ DC C ur rent G ain IC=-100µAVCE=-1V
h
C
FE
f
T
CBO
Tr ansition Fr eque nc y IC=-50mA VCE=-10V 50 MHz
Collector B as e
for B C161
for B C161 Gr. 6
for B C161 Gr. 10
for B C161 Gr. 16
=-100mA VCE=-1V
I
C
for B C161
for B C161 Gr. 6
for B C161 Gr. 10
for B C161 Gr. 16
=-1A VCE=-1V
I
C
for B C161
for B C161 Gr. 6
for B C161 Gr. 10
for B C161 Gr. 16
40
40
63
100
110
46
80
120
140
63
100
160
26
15
20
30
250
100
160
250
IE=0 VCB=-20V f=1MHz 15 30 pF
Capacit a nc e
C
EBO
Emitt er Base
IC=0 VCB= - 0. 5 V f = 1M Hz 180 pF
Capacit a nc e
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
Turn-on Time IC=-100mA IB1= -5 mA 500 ns
on
Turn-off Time IC=-100mA IB1=IB2= -5 mA 650 ns
off
V
V
V
2/5
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