SGS Thomson Microelectronics BC141 Datasheet
GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC141 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switchingapplicationup to 1A.
The complementaryPNPtype is the BC161.
BC141
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) 100 V
CBO
Collector-Emitter Voltage (IB=0) 60 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 1 A
I
C
Base Current 0.1 A
I
B
Total Dissipati on at T
tot
Stora ge Tem perat u re -55 to 175
stg
Max. Operati ng Junct ion Tem per at u r e 175
T
j
at T
amb
case
≤ 45oC
≤ 45oC
0.65
3.7
W
W
o
C
o
C
November 1997
1/5
BC141
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistan ce Ju nc tion-Case Max
Thermal Resistance Junction-Ambient Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR) CBO
CES
Collector C ut -off
Current (V
BE
∗ Collec tor-Base
=0)
=60V
V
CE
V
=60V T
CE
I
=100µA 100 V
C
amb
= 150oC
100
100
Break dow n Voltage
=0)
(I
E
V
(BR) CEO
∗ Collec tor-Emitter
I
=30mA 60 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
∗ Em itt er-Base
I
=100µA7V
E
Break dow n Voltage
=0)
(I
C
V
∗ Co llector-E m it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er O n
BE(on)
IC=100mA IB=10mA
=500mA IB=50mA
I
C
=1A IB= 100 mA
I
C
IC=1A VCE=1V 1.25 1.8 V
0.1
0.35
0.6 1
Volt age
∗ DC C urr ent G ain IC=100µAVCE=1V
h
C
FE
f
T
CBO
Tr ansition Fr eque nc y IC=50mA VCE=10V 50 MHz
Collector B as e
for B C141
for B C141 Gr. 6
for B C141 Gr. 10
for B C141 Gr. 16
=100mA VCE=1V
I
C
for B C141
for B C141 Gr. 6
for B C141 Gr. 10
for B C141 Gr. 16
=1A VCE=1V
I
C
for B C141
for B C141 Gr. 6
for B C141 Gr. 10
for B C141 Gr. 16
40
40
63
100
75
28
40
90
140
63
100
160
26
15
20
30
250
100
160
250
IE=0 VCB=5V f=1MHz 12 25 pF
Capacit a nc e
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
Turn-on Time IC=100mA IB1=5mA 250 ns
on
Turn-off Time IC=100mA IB1=IB2=5mA 850 ns
off
nA
µA
V
V
V
2/5
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