GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC141 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switchingapplicationup to 1A.
The complementaryPNPtype is the BC161.
BC141
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0) 100 V
CBO
Collector-Emitter Voltage (IB=0) 60 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 1 A
I
C
Base Current 0.1 A
I
B
Total Dissipati on at T
tot
Stora ge Tem perat u re -55 to 175
stg
Max. Operati ng Junct ion Tem per at u r e 175
T
j
at T
amb
case
≤ 45oC
≤ 45oC
0.65
3.7
W
W
o
C
o
C
November 1997
1/5
BC141
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resistan ce Ju nc tion-Case Max
Thermal Resistance Junction-Ambient Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR) CBO
CES
Collector C ut -off
Current (V
BE
∗ Collec tor-Base
=0)
=60V
V
CE
V
=60V T
CE
I
=100µA 100 V
C
amb
= 150oC
100
100
Break dow n Voltage
=0)
(I
E
V
(BR) CEO
∗ Collec tor-Emitter
I
=30mA 60 V
C
Break dow n Voltage
=0)
(I
B
V
(BR)EBO
∗ Em itt er-Base
I
=100µA7V
E
Break dow n Voltage
=0)
(I
C
V
∗ Co llector-E m it t er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er O n
BE(on)
IC=100mA IB=10mA
=500mA IB=50mA
I
C
=1A IB= 100 mA
I
C
IC=1A VCE=1V 1.25 1.8 V
0.1
0.35
0.6 1
Volt age
∗ DC C urr ent G ain IC=100µAVCE=1V
h
C
FE
f
T
CBO
Tr ansition Fr eque nc y IC=50mA VCE=10V 50 MHz
Collector B as e
for B C141
for B C141 Gr. 6
for B C141 Gr. 10
for B C141 Gr. 16
=100mA VCE=1V
I
C
for B C141
for B C141 Gr. 6
for B C141 Gr. 10
for B C141 Gr. 16
=1A VCE=1V
I
C
for B C141
for B C141 Gr. 6
for B C141 Gr. 10
for B C141 Gr. 16
40
40
63
100
75
28
40
90
140
63
100
160
26
15
20
30
250
100
160
250
IE=0 VCB=5V f=1MHz 12 25 pF
Capacit a nc e
t
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
Turn-on Time IC=100mA IB1=5mA 250 ns
on
Turn-off Time IC=100mA IB1=IB2=5mA 850 ns
off
nA
µA
V
V
V
2/5
Collector-emitter SaturationVoltage. Base-emitterVoltage.
DCCurent Gain. TransiitionFrequency.
BC141
3/5
BC141
TO-39 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
L45
mm inch
o
(typ.)
I
H
4/5
DA
G
F
E
L
B
P008B
BC141
Information furnished is believed tobe accurate andreliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such informationnor for anyinfringement of patentsor other rights ofthird parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replaces all information previouslysupplied.
SGS-THOMSONMicroelectronicsproductsare notauthorized for useas criticalcomponents in lifesupportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy - All Rights Reserved
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