SGS Thomson Microelectronics BC109C, BC109B, BC108C, BC108B, BC108A Datasheet
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LOW NOISEGENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTIO N
The BC107, BC108 and BC109 are silicon planar
epitaxial NPNtransistors in TO-18 metalcase.They
aresuitable for use in driver stages, low noiseinput
stages and signal processing circuits of television
receivers. The complementary PNP types are respectivelythe BC177, BC178 and BC179.
BC107
BC108-BC109
TO-18
INTERN AL SCHEMAT IC DI AGR AM
ABSOLUTE MAXI MUM RATI N GS
Symbol Parameter
V
V
V
P
T
CBO
CEO
EBO
I
C
tot
stg
T
Collector-base Voltage (IE=0) 50 30 30 V
Collector-emitter Voltage (IB=0) 45 20 20 V
Emitter-base Voltage (IC=0) 6 5 5 V
Collector Current 100 mA
Total Power Dissipation
Storage Temperature – 55 to 175 °C
Junction Temperature 175 °C
j
at T
at T
amb
case
≤ 25 °C
≤ 25 °C
Value
BC107 BC108 BC109
0.3
0.75
Unit
W
W
January 1989
1/7
BC107-BC108-BC109
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS(T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
200
500
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EB O
V
CE(sa t)
V
BE
V
BE(sat)
h
FE
* Pulsed: pulse duration= 300 µs, duty cycle =1 %.
Collector Cutoff
Current (I
E
=0)
for BC107
VCB=40V
VCB=40V
for BC108-BC
V
=20V
CB
VCB=20V
Collector-base
=10µA
I
C
Breakdown Voltage
(I
=0)
E
* Collector-emitter
IC=10mA
Breakdown Voltage
(IB=0)
Emitter-base
=10µA
I
E
Breakdown Voltage
(I
=0)
C
* Collector-emitter
Saturation Voltage
IC=10mA
I
=100mA
C
* Base-emitter Voltage IC=2mA
I
=10mA
C
* Base-emitter Saturation
Voltage
IC=10mA
IC=100mA
* DC Current Gain IC=2mA
I
=10µA
C
= 150 °C
T
amb
109
T
= 150 °C
amb
for BC107
for BC108
for BC109
for BC107
for BC108
for BC109
for BC107
for BC108
for BC109
= 0.5 mA
I
B
I
=5mA
B
=5V
V
CE
V
=5V
CE
IB= 0.5 mA
IB=5mA
=5V
V
CE
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
V
=5V
CE
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
50
30
30
45
20
20
6
5
5
70
200
550 650
700
750
900
110
110
200
110
110
200
420
200
200
420
230
180
290
350
180
290
520
350
290
520
120
90
40
150
120
90
40
100
150
270
40
40
100
150
270
15
15
15
15
250
600
700
700
450
220
450
800
220
450
800
800
450
800
°C/W
°C/W
nA
µA
µA
µA
V
V
V
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
2/7
BC107-BC108-BC109
ELECTRICAL CHARACTERISTICS(continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
h
fe
Small Signal
Current Gain
C
CBO
Collector-base
Capacitance
C
EBO
Emitter-base
Capacitance
NF Noise Figure I
h
ie
* Pulsed: pulse duration = 300 µs, duty cycle =1 %.
Input Impedance IC=2mA
IC=2mA
f = 1 kHz
=10mA
I
C
f=100MHz
IE=0
f=1MHz
IC=0
f=1MHz
= 0.2 mA
C
Rg=2kΩ
B=200Hz
I
= 0.2 mA
C
R
=2kΩ
g
f = 10 Hz to 10
B = 15.7 kHz
f = 1 kHz
V
=5V
CE
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
V
=10V
CE
VCB=10V
VEB= 0.5 V
=5V
V
CE
f = 1 kHz
for BC107
for BC108
for BC109
V
=5V
CE
kHz
for BC109
VCE=5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
250
190
300
370
190
300
500
370
300
550
2
46
12 pF
2
2
1.5
1.5
10
10
4
4
4
3
4.8
5.5
3
4.8
7
5.5
4.8
7
pF
dB
dB
dB
dB
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
3/7
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