SGS Thomson Microelectronics BAT60JFILM Datasheet
®
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
LOW FORWARD VOLTAGE DROP
■
EXTREMELY FAST SWITCHING
■
SURFACE MOUNTED DEVICE
■
DESCRIPTION
Schottky barrier diode encapsulated in a SOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversion and power management.
A
60
SOD-323
BAT60J
K
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
FSM
P
T
I
stg
Repetitive peak reverse voltage 10 V
Peak forward current δ = 0.11 3 A
F
Surge non repetitive forward current tp=10ms 5 A
Power Dissipation Ta=25°C 310 mW
tot
Storage temperature range -65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
TL Maximum temperature for soldering during 10s 260 °C
dPtot
*:
<
dTj Rth j a
thermal runaway condition for a diode on its own heatsink
−1()
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
(*) Mountedonepoxy board with recommended pad layout.
Junction to ambient (*) 400 °C/W
January 2003 - Ed: 6A
1/5
BAT60J
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests conditions Min. Typ. Max. Unit
V
* Forward voltage drop Tj = 25°C IF= 10 mA 0.28 0.32 V
F
I
= 100 mA 0.35 0.40
F
I
= 1 A 0.53 0.58
F
I
** Reverseleakage current Tj = 25°C VR=5V 1 3 µA
R
Tj = 25°C V
Tj = 25°C V
Tj = 25°C V
Tj = 80°C V
Pulse test: * tp = 380µs, δ <2%
** tp = 5ms, δ <2%
To evaluate the conduction losses the following equation:
P=0.38xI
F(AV)
+ 0.17 I
F2(RMS)
= 8 V 1.3 4
R
=10V 2 6
R
= 12 V 2.5 7.5
R
= 8 V 73 150
R
2/5
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