SGS Thomson Microelectronics BAT54WFILM, BAT54SWFILM, BAT54JFILM, BAT54AWFILM, BAT54CWFILM Datasheet
®
BAT54J / W / AW / CW / SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENE FITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD V O LTAGE DROP
SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
K
BAT54W
K
BAT54CW
NC
A
A2
A1
BAT54J
NC
K
A
A2
K
A1
SOT-323
A
A2
K1
A
K2
K1
BAT54AW
K2
A1
BAT54SW
86
K
K2
A
K1
K2
A2
K1
A1
SOD-323
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
I
RRM
FSM
P
T
Repetitive peak reverse voltage 30 V
I
Continuous forward current 0.3 A
F
Surge non repetitive forward current tp=10ms sinusoidal 1 A
Power dissipation (note 1)
tot
Tamb = 25°C
Maximum storage temperature range - 65 to +150
stg
SOD-323 230 mW
SOT-323
Tj Maximum operating junction temperature * 150
T
Note 1:
dPtot
* :
June 1999 - Ed: 2A
Maximum temperature for soldering during 10s 260
L
for double diodes, Ptot is the total dissipation of both diodes
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
dTj
<
°
C
°
C
°
C
1/5
BAT54J / W / AW / CW / SW
THERMAL RE SISTA NC E
Symbol Parameters Value Unit
R
th (j -a)
Junction to ambient (*) SOD-323 550
SOT-323
°
°
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTE RISTICS
(per diode)
Symbol Parameters Tests conditions Min. Typ. Max. Unit
* Forward voltage drop Tj = 25°CI
V
F
** Rev erse leakage current Tj = 25°CV
I
R
= 0.1 mA 240 mV
F
= 1 mA 320
I
F
= 10 mA 400
I
F
= 30 mA 500
I
F
= 100 mA 900
I
F
= 30 V 1
R
Tj = 100°C 100
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
(Tj = 25 °C)
C/W
C/W
µ
A
Symbol Parameters Tests conditions Min. Typ. Max. Unit
C J unction
Tj = 25°CV
= 1 V F = 1 MHz 10 pF
R
capacitance
t
rr
Fig. 1-1:
current (typical values, low level).
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
0.00E+0
Revers e recovery
time
IF = 10 mA IR = 10 mA Tj = 25°C
I
= 1 mA RL = 100
rr
Forward voltage drop versus forward
IFM(A)
Tj=100°C
Tj=50°C
0.00 0.050.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Tj=25°C
VFM(V)
5ns
Ω
Fig. 1-2:
Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
5E-1
Tj=100°C
1E-1
Tj=50°C
1E-2
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Tj=25°C
VFM(V)
2/5
Loading...