SGS Thomson Microelectronics BAT54S, BAT54C, BAT54, BAT54A Datasheet

®
BAT54, A, C, S
SMALL SIGNAL SCHOTTKY DIODE
VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD V O LTAGE DROP SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated in a SOT-23 small SMD packages.
Double diodes with different pining are available.
K
A
BAT54
K
A1
A2
BAT54C
Nc
A1
A2
A
A
K
K1
K2
BAT54A
A1
K
K2
K1
A2
BAT54S
SOT-23
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
K1
A
K2
A2
A1 K2
K1
V
I
RRM
I
FSM
P T
stg
Repetitive peak reverse voltage 30 V Continuous forward current 0.3 A
F
Surge non repetitive forward current tp=10ms sinusoidal 1 A Power dissipation (note 1) T
tot
= 25°C 250 mW
amb
Maximum storage temperature range - 65 to +150
Tj Maximum operating junction temperature * 150
T
Note 1:
dPtot
* :
dTj
June 1999 - Ed: 3A
Maximum temperature for soldering during 10s 260
L
for double diodes, Ptot is the total dissipation of both diodes.
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
°
C
°
C
°
C
1/5
BAT54, A, C, S
THERMAL RE SISTA NC E
Symbol Parameter Value Unit
R
th (j -a)
(*) Mounted on epoxy board with recommended pad layout.
Junction to ambient (*) 500
STATIC ELECTRICAL CHARACTE RISTICS
(per diode)
°
Symbol Parameters Tests conditions Min. Typ. Max. Unit
* Forward voltage drop Tj = 25°CI
V
F
** Reverse leakage current Tj = 25°CV
I
R
= 0.1 mA 240 mV
F
= 1 mA 320
I
F
= 10 mA 400
I
F
= 30 mA 500
I
F
= 100 mA 900
I
F
= 30 V 1
R
Tj = 100°C 100
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
(Tj = 25 °C)
C/W
µ
A
Symbol Parameters Tests conditions Min. Typ. Max. Unit
C J unction
Tj = 25°CV
= 1 V F = 1 MHz 10 pF
R
capacitance
t
Fig.1 :
average forward current.
PF(av)(W)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Revers e recovery
rr
time
IF = 10 mA IR = 10 mA Tj = 25°C I
= 1 mA RL = 100
rr
Average forward power dissipation versus
δ = 0.1
δ = 0.05
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
5ns
Fig.2 :
Average forward current versus ambient
temperature ( δ = 1).
IF(av)(A)
0.35
0.30
0.25
0.20
0.15
0.10
tp
0.05
0.00 0 25 50 75 100 125 150
δ
=tp/T
T
tp
Tamb(°C)
2/5
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