SGS Thomson Microelectronics BAT46WFILM, BAT46SWFILM, BAT46JFILM, BAT46CWFILM, BAT46AWFILM Datasheet
BAT46J / BAT46W
®
BAT46AW /BAT46CW / BAT 46SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSE S
LOW FORWARD V O LTAGE DROP
SURFACE MOUNT DEVICE
DESCRIPTION
High voltage schottky rectifier suited for SLIC protection during the card insertion operation.
K
BAT46W
K
BAT46CW
K
A
NC
A
A
K2
K1
K1
A
K2
BAT46AW
A1
A1
A1
A2
K
A2
K2
A2
K1
A1
K1
K2
A2
BAT46SW
SOT-323
46
A
K
BAT46J
SOD-323
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
P
T
Repetitive peak reverse voltage 100 V
I
Continuous forward current 150 mA
F
Power dissipation (note 1)
tot
Tamb = 25°C
Maximum storage temperature range - 65 to +150
stg
SOD-323 230 mW
SOT-323
Tj Maximum operating junction temperature * 150
T
Note 1:
dPtot
* :
Maximum temperature for soldering during 10s 260
L
for double diodes, Ptot is the total dissipation of the both diodes.
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
dTj
<
°
C
°
C
°
C
June 1999 - Ed: 2A
1/5
BAT46J / BAT46W / BAT46 AW / BAT46CW / BAT46SW
THERMAL RE SISTA NC E
Symbol Parameters Value Unit
R
th (j -a)
Junction to ambient (*) SOD-323 550
SOT-323
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Test conditions Min. Typ. Max. Unit
V
BR
V
F
I
R
Tj = 25 °C IR = 100 µA 100 V
* Tj = 25 °C IF = 0.1 mA 0.25 V
Tj = 25 °C I
Tj = 25 °C I
= 10 mA 0.45
F
= 250 mA 1
F
** Tj = 25 °C VR = 1.5 V 0.5
Tj = 60 °C 5
Tj = 25 °C V
= 10 V 0.8
R
Tj = 60 °C 7.5
Tj = 25 °C V
= 50 V 2
R
Tj = 60 °C 15
Tj = 25 °C V
= 75 V 5
R
Tj = 60 °C 20
Pulse test : * tp = 380µs δ < 2%
** tp = 5ms, δ < 2%
°
C/W
°
C/W
µ
A
DYNAMIC CHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
C Tj = 25 °C V
Tj = 25 °C V
2/5
= 0 V F = 1MHz 10 pF
R
= 1 V 6
R
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