SGS Thomson Microelectronics BAT46 Datasheet
®
BA T46
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metalto silicon diode featuring
DO 35
(Glass)
high breakdown voltage low turn-on voltage.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive P eak Re v erse Voltage 100 V
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
Power Dissipation* TI = 80°C 150 mW
Storage and Junction Temperature Range - 65 to + 150
j
Maximum Temperature for Soldering during 10s at 4mm from Case 230
(limiting values)
= 25
T
a
t
≤ 1s
p
0.5
δ ≤
= 10ms
t
p
C
°
150 mA
350 mA
750 mA
- 65 to + 125
THERMAL R E SI STANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length.
Junction-ambient* 300
°
°
C/W
°
C
C
August 1999 Ed: 1A
1/4
BAT46
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
VF *
I
*
R
Tj = 25°C
= 25°C
T
j
Tj = 25°C
Tj = 25°C
= 25°C
T
j
T
= 60°C 5
j
T
= 25°C
j
IF = 10µA
IF = 0.1mA
IF = 10mA
IF = 250mA
VR = 1.5V
VR = 10V
100 V
0.25 V
0.45
1
0.5
0.8
Tj = 60°C 7.5
Tj = 25°C VR = 50V 2
Tj = 60°C 15
Tj = 25°C VR = 75V 5
Tj = 60°C 20
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
= 25°C VR = 0V
T
j
= 25°C VR = 1V
T
j
f = 1Mhz
10 pF
6
A
µ
* Pulse test: t
300µs δ < 2%
≤
p
.
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