SGS Thomson Microelectronics BAT42, BAT43 Datasheet
BAT 42
SMALLSIGNAL SCHOTTKY DIODES
DESCRIPTION
Generalpurpose,metal to silicon diodes featuring
very low turn-onvoltagefast switching.
These devices have integrated protectionagainst
excessivevoltagesuchaselectrostaticdischarges.
ABSOLUTE RATINGS(limitingvalues)
BAT 43
DO 35
(Glass)
Symbol Parameter Value Unit
V
I
I
RRM
I
FRM
FSM
P
T
T
T
F
tot
stg
L
Repetitive Peak Reverse Voltage 30 V
Forward Continuous Current
Repetitive Peak Fordware Current t
Surge nonRepetitive Forward Current* tp= 10ms 4 A
Power Dissipation* Tl=65°C 200 mW
Storage andJunction Temperature Range - 65to +150
j
Maximum Temperaturefor Solderingduring 10s at 4mm from Case 230
=25°C
T
a
≤
p
δ ≤ 0.5
1s
200 mA
500 mA
- 65to +125
THERMALRESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infiniteheatsink with 4mm lead length
Junction-ambient* 300 °
C
°
C
°
C
°
C/W
August 1999 Ed: 1A
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BAT42/BAT43
ELECTRICALCHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
*
F
*
I
R
Tj= 25°CI
=25°C
T
j
=25°C
T
j
=25°C
T
j
=25°C
T
j
=25°C
T
j
=25°C
T
j
= 100°C
T
j
= 100µA
R
I
= 200mA All Types 1 V
F
I
= 10mA BAT42 0.4
F
I
= 50mA 0.65
F
I
= 2mA BAT43 0.26 0.33
F
I
= 15mA 0.45
F
V
= 25V 0.5
R
DYNAMICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
trr Tj = 25°CIF= 10mA IR= 10mA irr= 1mA RL= 100
hT
=25°CVR=1V f=1MHz
T
j
=25°CRL= 15KΩCL= 300pF f = 45MHz Vi=2V 80 %
j
30 V
7pF
Ω
100
5ns
A
µ
* Pulse test: tp≤ 300µs δ< 2%.
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
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