SGS Thomson Microelectronics BAT41 Datasheet
®
BAT 41
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 100 V
Forward Continuous Current*
Repetitive Peak Forward Current* tp ≤ 1s
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range - 65 to +150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
(limiting values)
= 25
T
a
0.5
δ ≤
≤ 10ms
t
p
= 95°C
T
a
C
°
DO 35
(Glass)
100 mA
350 mA
750 mA
100 mW
- 65 to +125
230
C
°
C
°
C
°
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 300
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
* *
F
I
* *
R
Tj = 25°CI
= 25°CI
T
j
T
= 25°CI
j
= 25°C
T
j
= 100°C
T
j
= 100µA
R
= 1mA
F
= 200mA
F
V
= 50V 0.1
R
100 V
0.4 0.45 V
1
20
DYNAMIC CHARACT ERIS TICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* On infinite heatsink with 4mm lead length
* * Pulse test: t
= 25°CV
T
j
300µs δ < 2%
≤
p
.
August 1999 Ed: 1A
= 1V f = 1MHz
R
2pF
C/W
°
µ
A
1/4
BAT 41
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Rever se current versus continuous
reverse voltage (typical values).
2/4
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