No. 5815-4/22
LC72121, 72121M, 72121V
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
DD
max V
DD
–0.3 to +7.0 V
V
IN
1 max CE, DI, CL, AIN –0.3 to +7.0 V
Maximum input voltage V
IN
2 max XIN, FMIN, AMIN, IFIN –0.3 to VDD+0.3 V
V
IN
3 max IO1, IO2 –0.3 to +15 V
V
O
1 max DO –0.3 to +7.0 V
Maximum output voltage V
O
2 max XOUT, PD –0.3 to VDD+0.3 V
V
O
3 max BO1 to BO4, IO1, IO2, AOUT –0.3 to +15 V
Maximum output current
I
O
1 max DO, AOUT 0 to +6.0 mA
I
O
2 max BO1 to BO4, IO1, IO2 0 to +10.0 mA
DIP22S: 350 mW
Allowable power dissipation Pd max (Ta ≤ 85°C) MFP24S: 200 mW
SSOP24: 150 mW
Operating temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +125 °C
Specifications
Absolute Maximum Ratings at Ta = 25°C, V
SSd
= V
SSa
= V
SSX
= 0 V
Parameter Symbol Conditions
Ratings
Unit
min typ max
Supply voltage V
DDVDD
2.7 3.6 V
Input high-level voltage
V
IH
1 CE, DI, CL 0.7 V
DD
6.5 V
V
IH
2 IO1, IO2 0.7 V
DD
13 V
Input low-level voltage V
IL
CE, DI, CL, IO1, IO2 0 0.3 V
DD
V
Output voltage
V
O
1 DO 0 6.5 V
V
O
2 BO1 to BO4, IO1, IO2, AOUT 0 13 V
f
IN
1 XIN: VIN1 1 8 MHz
f
IN
2 FMIN: VIN2 10 160 MHz
Input frequency f
IN
3 AMIN (SNS = 1): VIN3 2 40 MHz
f
IN
4 AMIN (SNS = 0): VIN4 0.5 10 MHz
f
IN
5 IFIN: VIN5 0.4 12 MHz
V
IN
1 XIN: fIN1 200 800 mVrms
V
IN
2-1 FMIN: f = 10 to 130 MHz 20 800 mVrms
V
IN
2-2 FMIN: f = 130 to 160 MHz 40 800 mVrms
Input amplitude V
IN
3 AMIN (SNS = 1): fIN3 40 800 mVrms
V
IN
4 AMIN (SNS = 0): fIN4 40 800 mVrms
V
IN
5-1 IFIN: fIN5, IFS = 1 40 800 mVrms
V
IN
5-2 IFIN: fIN5, IFS = 0 70 800 mVrms
Guaranteed crystal oscillator frequency Xtal
XIN, XOUT: *1 4.5 MHz
XIN, XOUT: *2 7.2 MHz
Allowable Operating Ranges at Ta = – 40 to +85°C, V
SSd
= V
SSa
= V
SSX
= 0 V
Notes: 1. Recommended value for CI for the crystal oscillator element: CI < 120Ω
2. Recommended value for CI for the crystal oscillator element: CI < 70Ω
Parameter Symbol Conditions
Ratings
Unit
min typ max
Rf1 XIN 1 MΩ
Internal feedback resistance
Rf2 FMIN 500 kΩ
Rf3 AMIN 500 kΩ
Rf4 IFIN 250 kΩ
Internal pull-down resistance
Rpd1 FMIN 100 200 400 kΩ
Rpd2 AMIN 100 200 400 kΩ
Hysteresis V
HIS
CE, DI, CL 0.1 V
DD
V
Output high-level voltage V
OH
1 PD: IO= –1 mA VDD– 1.0 V
Electrical Characteristics in the Allowable Operating Ranges
Continued on next page.