Sanyo FH103 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Ordering number:ENN6217
FH103
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
· The FH103 is formed with two chips, being equivalent to the 2SC4867, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
B2B1
E2
Tr1 Tr2
C1 E1 C2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
Mounted on a ceramic board (250mm2×0.8mm) 1unit
C
Mounted on a ceramic board (250mm
T
Package Dimensions
unit:mm
2149
[FH103]
0.25
6
12
0.65
2.0
2
×0.8mm)
54
3
0.2
0.4250.425
1.25
0.9
2.1
0.15
0 to 0.1
0.2
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
61V
8V
5.1V
05Am
003Wm
005Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
oitaRniaGtnerruCCD
ecnereffiDegatloVrettimE-ot-esaB
h
h
V
V
OBC
V
OBE
V
EF
EF
V
)egral/llams(
EB
V
)llams-egral(
I,V01=
BC
BE
EC
EC
BC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am51=
C
I,V5=
Am51=7.059.0
C
I,V5=
Am51=0.1Vm
C
Note) The specifications shown above are for each individual transistor.
Marking : 103
N0199TS (KOTO) TA-1706 No.6217–1/4
sgnitaR
nimpytxam
09002
Continued on next page.
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuO
niaGrefsnarTdrawroF
erugiFesioN
V
T
V
boC
2
V
|e12S|
FNVECI,V5=
EC
BC
EC
Note) The specifications shown above are for each individual transistor.
Marking : 103
h
-- I
3
2
100
FE
7
5
3
2
DC Current Gain, h
10
7
5
3
5
3
2
1.0 10
FE
23 57
Cob -- V
C
VCE=5V
23 5757 2
CB
f=1MHz
100
IT00300
FH103
I,V5=
C
I,V5=
C
C
nimpytxam
Am51=
zHM1=f,V01=
zHG1=f,Am51=
0131Bd
zHG1=f,Am5=2.15.2Bd
f
-- I
T
C
10 100
CB
– GHz
T
Gain-Bandwidth Product, f
1.0
2
10
7
5
3
2
7
5
3
5
5
3
2
1.0
23 57 23 577
Collector Current, IC–mACollector Current, IC–mA
Cre -- V
sgnitaR
9zHG
6.01.1Fp
VCE=5V
IT00301
f=1MHz
tinU
1.0
7
5
3
2
Output Capacitance, Cob – pF
0.1
7
5
7
10
23 57
0.1
Collector-to-Base Voltage, VCB-- V
1.0
23 2357
NF -- I
10
5
IT00302
C
VCE=5V
f=1GHz
8
6
4
Noise Figure, NF – dB
2
0
77
1.0
23 2357
Collector Current, IC– mA Collector Current, IC–mA
10
5
IT00304
1.0
7
5
3
2
0.1
7
Reverse Transfer Capacitance, Cre – pF
5
7
16
14
–dB
2
12
10
8
6
4
2
Forward Transfer Gain, S21e
0
3
23 57
0.1
Collector-to-Base Voltage, VCB-- V
S21e
57
1.0
23 57
1.0
23 2357
2
-- I
C
10
10
IT00303
VCE=5V
f=1GHz
23 57
IT00305
5
100
No.6217–2/4
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