Sanyo FH103 Specifications

Ordering number:ENN6217

NPN Epitaxial Planar Silicon Composite Transistor

FH103

High-Frequency Low-Noise Amplifier,

Differential Amplifier Applications

Features

·Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly.

·The FH103 is formed with two chips, being equivalent to the 2SC4867, placed in one package.

·Excellent in thermal equilibrium and pair capability.

Electrical Connection

B1 B2 E2

Tr1 Tr2

C1 E1 C2

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2149

[FH103]

	0.25		0.425	0.15	0.2
6	5	4
			1.25	2.1	0 to 0.1
1	2	3	0.425
0.65		0.2			1	: Collector1
	2.0
					2	: Emitter1
			0.9		3	: Collector2
					4	: Emitter2
					5	: Base2
					6	: Base1

SANYO : MCP6

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		16	V
Collector-to-Emitter Voltage	VCEO		8	V
Emitter-to-Base Voltage	VEBO		1.5	V
Collector Current	IC		50	mA
Collector Dissipation	PC	Mounted on a ceramic board (250mm2×0.8mm) 1unit	300	mW
Total Dissipation	PT	Mounted on a ceramic board (250mm2×0.8mm)	500	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Collector Cutoff Current	ICBO	VCB=10V, IE=0				1.0	µA
Emitter Cutoff Current	IEBO	VEB=1V, IC=0				10	µA
DC Current Gain	hFE	VCE=5V, IC=15mA		90		200
DC Current Gain Ratio	hFE	VCE=5V, IC=15mA		0.7	0.95
	(small/large)
Base-to-Emitter Voltage Difference	VBE	VCB=5V, IC=15mA			1.0		mV
	(large-small)

Continued on next page.

Note) The specifications shown above are for each individual transistor. Marking : 103

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N0199TS (KOTO) TA-1706 No.6217–1/4

FH103

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Gain-Bandwidth Product	fT	VCE=5V, IC=15mA		9		GHz
Output Capacitance	Cob	VCB=10V, f=1MHz		0.6	1.1	pF
Forward Transfer Gain	| S21e |2	VCE=5V, IC=15mA, f=1GHz	10	13		dB
Noise Figure	NF	VCE=5V, IC=5mA, f=1GHz		1.2	2.5	dB

Note) The specifications shown above are for each individual transistor.

Marking : 103

DC Current Gain, hFE

Output Capacitance, Cob – pF

Noise Figure, NF – dB

3													hFE -- IC
2																															VCE=5V
100
7
5
3
2
10
7
5
3	5			7		1.0				2	3		5			7			10			2		3		5			7				100				2
										Collector Current, IC												–		mA										IT00300
5												Cob -- VCB
																																f=1MHz
3
2
1.0
7
5
3
2
0.1
7
5
7	0.1					2			3	5	7		1.0			2			3			5		7		10							2	3			5
							Collector-to-Base Voltage, VCB																			--			V					IT00302
10													NF			--				IC

VCE=5V f=1GHz

8

6

4

2

0

7	1.0	2	3	5	7	10	2	3	5	7
			Collector Current, IC				– mA		IT00304

Gain-Bandwidth Product, fT – GHz

Reverse Transfer Capacitance, Cre – pF

2 Forward Transfer Gain, S21e – dB

2														fT		--				IC
																																VCE=5V
10
7
5
3
2
1.0
7
5
3
5	7		1.0						2		3		5			7				10					2			3			5			7		100
									Collector Current, IC														–		mA								IT00301
5													Cre -- VCB
																																f=1MHz
3
2
1.0
7
5
3
2
0.1
7
5
7	0.1		2			3			5		7		1.0			2				3			5		7			10			2			3		5
						Collector-to-Base Voltage, VCB																						--			V		IT00303
											S21e 2									--			I
16																							C
																																VCE=5V
14																																f=1GHz
12
10
8
6
4
2
0
3	5		7			1.0					2		3			5			7	10					2			3			5			7		100
									Collector Current, IC														–		mA								IT00305

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