Sanyo FC18 Specifications

Ordering number:ENN4983

TR:NPN Epitaxial Planar Silicon Transistor

FET:N-Channel Junction Silicon FET

Features

·Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the convertional CP package, improving the mounting efficiency greatly.

·Drain and emitter are shared.

Electrical Connection

B

E / D

S

C G

FC18

High-Frequency Amp, AM Amp,

Low-Frequency Amp Applications

Package Dimensions

unit:mm

2122

[FC18]

	1.9
	0.95	0.95			0.16
5	4	3
			0.6
					0 to 0.1
			1.6	2.8
	10.4	2	0.6		1:Collector
	2.9
					2:Gate
			0.8	1.1	3:Source
					4:Emitter/Drain
					5:Base
					SANYO:XP5

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
[FET]
Drain-to-Source Voltage	VDSX		15	V
Gate-to-Drain Voltage	VGDS		–15	V
Gate Current	IG		10	mA
Drain Current	ID		50	mA
Allowable Power Dissipation	PD		200	mW
[TR]
Collector-to-Base Voltage	VCBO		55	V
Collector-to-Emitter Voltage	VCEO		50	V
Emitter-to-Base Voltage	VEBO		6	V
Collector Current	IC		150	mA
Collector Current (Pulse)	ICP		300	mA
Base Current	IB		30	mA
Collector Dissipation	PC		200	mW
[Common Ratings]
Total Dissipation	PT		300	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C
· Marking:18			Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72101TN (KT)/52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/6

FC18

Continued from preceding page.

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
[FET]
G-D Breakdown Voltage	V(BR)GDS	IG=–10µA, VDS=0	–15			V
Gate Cutoff Current	IGSS	VGS=–10V, VDS=0			–1.0	nA
Cutoff Voltage	VGS(off)	VDS=5V, ID=100µA	–0.3	–0.7	–1.5	V
Drain Current	IDSS	VDS=5V, VGS=0	6.0*		32.0*	mA
Forward Transfer Admittance	| Yfs |	VDS=5V, VGS=0, f=1kHz	20	38		mS
Input Capacitance	Ciss	VDS=5V, VGS=0, f=1MHz		10.0		pF
Reverse Transfer Capacitance	Crss	VDS=5V, VGS=0, f=1MHz		2.9		pF
Noise Figure	NF	VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz		1.0		dB
[TR]
Collector Cuttoff Current	ICBO	VCB=35V, IE=0			0.1	µA
Emitter Cutoff Current	IEBO	VEB=4V, IC=0			0.1	µA
DC Current Gain	hFE	VCE=6V, IC=1mA	135		400
Gain-Bandwidth Product	fT	VCE=6V, IC=10mA		200		MHz
Output Capacitance	Cob	VCB=6V, f=1MHz		1.7		pF
C-E Saturation Voltage	VCE(sat)	IC=50mA, IB=5mA		0.08	0.4	V
B-E Saturation Voltage	VBE(sat)	IC=50mA, IB=5mA		0.8	1.0	V
C-B Breakdown Voltage	V(BR)CBO	IC=10µA, IE=0	55			V
C-E Breakdown Voltage	V(BR)CEO	IC=1mA, RBE=∞	50			V
E-B Breakdown Voltage	V(BR)EBO	IE=10µA, IC=0	6			V
Turn-ON Time	ton	See specified Test Circuit		0.15		µs
Storage Time	tstg	See specified Test Circuit		0.75		µs
Fall Time	tf	See specified Test Circuit		0.20		µs

Note*:The FC18 is classified by IDSS as follows : (unit:mA)

6.0 F 120	10.0 G 20.0	16.0 H 32.0

Marking:18

IDSS rank:F, G, H

The specifications shown above are for each individual FET or transistor.

Switching Time Test Circuit

PW=20µs

D.C.≤ 1%

INPUT

50Ω

IB1

	IB2	OUTPUT
	1kΩ	RL
	VR
		2kΩ

+	+
220µF	470µF

VBE= --5V VCC=20V

10IB1= --10IB2=IC=10mA

No.4983-2/6