Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TR:NPN Epitaxial Planar Silicon Transistor
FET:N-Channel Junction Silicon FET
High-Frequency Amp, AM Amp,
Low-Frequency Amp Applications
Ordering number:ENN4983
FC18
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composed of 2 chips, one being equivalent to the
2SK2394 and the other the 2SC4639, in the
convertional CP package, improving the mounting
efficiency greatly.
· Drain and emitter are shared.
Electrical Connection
B S
E / D
CG
Package Dimensions
unit:mm
2122
[FC18]
1.9
0.95 0.95
54
3
0.60.6
1.6
1
2
0.4
2.9
1.1
0.8
0.16
0 to 0.1
2.8
1:Collector
2:Gate
3:Source
4:Emitter/Drain
5:Base
SANYO:XP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEF[
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollA
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
]sgnitaRnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
· Marking:18
G
D
P
D
C
B
C
T
XSD
SDG
OBC
OEC
OBE
PC
Continued on next page.
51V
51–V
01Am
05Am
002Wm
55V
05V
6V
051Am
003Am
03Am
002Wm
003Wm
˚C
˚C
72101TN (KT)/52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/6
Page 2
FC18
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEF[
egatloVnwodkaerBD-GV
tnerruCffotuCetaGI
egatloVffotuCV
tnerruCniarDI
ecnattimdArefsnarTdrawroFY|sf|VSDV,V5=
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
erugiFesioNFNVSDk1=gR,V5= ,Ω I
]RT[
tnerruCffottuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS57.0sµ
emiTllaFt
Note*:The FC18 is classified by I
021F0.60.02G0.010.23H0.61
as follows : (unit:mA)
DSS
I
SDG)RB(
G
V
SSG
V
)ffo(SG
V
SSD
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
V,Aµ01–=
0=51–V
SD
V,V01–=
SG
SD
SD
BC
BE
EC
EC
BC
0=0.1–An
SD
I,V5=
Aµ001=3.0–7.0–5.1–V
D
V,V5=
0=*0.6*0.23Am
SG
SG
SG
SG
I,V53=
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V6=
C
I,V6=
C
I,Am05=
B
I,Am05=
B
I,Aµ01=
0=55V
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
0=6V
C
zHk1=f,0=0283Sm
zHM1=f,0=0.01Fp
zHM1=f,0=9.2Fp
D
Am1=531004
Am01=002zHM
zHM1=f,V6=7.1Fp
Am5=80.04.0V
Am5=8.00.1V
tiucriCtseTdeificepseeS51.0sµ
tiucriCtseTdeificepseeS02.0sµ
sgnitaR
nimpytxam
zHk1=f,Am1=0.1Bd
tinU
Marking:18
I
rank:F, G, H
DSS
The specifications shown above are for each individual FET or transistor.
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
INPUT
50Ω
10IB1= --10IB2=IC=10mA
B1
I
B2
1kΩ
V
R
+
220µF470µF
OUTPUT
R
L
2kΩ
+
VCC=20VVBE= --5V
No.4983-2/6
Page 3
I
-- V
–mA
D
20
16
12
8
D
DS
V
GS
--0.1V
--0.2V
=0
--0.3V
Drain Current, I
4
--0.7V
0
0
0.4 0.8 1.2 1.6 2.0
--0.6V
--0.4V
--0.5V
Drain-to-Source Voltage, VDS–V
I
22
VDS=5V
20
18
16
–mA
14
D
12
10
8
6
Drain Current, I
4
2
0
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
7
VDS=5V
5
f=1kHz
3
fs|–mS
y
2
Gate-to-Source Voltage, V
D -- VGS
yfs -- I
=6mA
I
DSS
D
DSS
I
GS
15mA
=20mA
15mA
10mA
–V
30mA
[FET]
ITR10364
[FET]
6mA
ITR10366
[FET]
FC18
I
-- V
D
20
DS
V
16
–mA
D
12
--0.1V
--0.2V
8
Drain Current, I
4
--0.3V
--0.4V
--0.5V
--0.7V
0
0
246810
Drain-to-Source Voltage, VDS–V
I
16
VDS=5V
I
=15mA
DSS
14
12
–mA
10
D
8
6
Drain Current, I
4
2
0
--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
100
7
fs|–mS
y
5
Gate-to-Source Voltage, VGS–V
D -- VGS
yfs -- I
Ta= --25
DSS
°C
75°C
25°C
VDS=5V
VGS=0
f=1kHz
[FET]
=0
GS
--0.6V
ITR10365
[FET]
ITR10367
[FET]
10
7
5
3
Forward Transfer Admittance, |
2
3
75235723
1.0
Drain Current, ID–mA
2
(off) – V
--1 .0
GS
7
5
3
2
--0 .1
Gate-to-Source Cutoff Voltage, V
357
VGS(off) -- I
Saturation Drain Current, I
10
10
DSS
ITR10368
[FET]
VDS=5V
ID=100µA
23 5
–mA
DSS
ITR10370
3
2
Forward Transfer Admittance, |
5
10
35
3
2
10
7
5
3
2
Input Capacitance, Ciss – pF
1.0
7235723
1.0 10
7
10
Drain Current, I
Ciss -- V
23 5
–mA
DSS
DS
Drain-to-Source Voltage, VDS–V
ITR10369
[FET]
VGS=0
f=1MHz
ITR10371
No.4983-3/6
Page 4
FC18
10
7
5
Crss -- V
DS
[FET]
VGS=0
f=1MHz
10
8
NF -- f
[FET]
VDS=5V
ID=1mA
Rg=1kΩ
3
2
1.0
7
Reverse Transfer Capacitance, Crss – pF
5
73
1.0
10
2
Drain-to-Source Voltage, V
NF -- Rg
DS
10
–V
2357
ITR10372
[FET]
VDS=5V
6
4
Noise Figure, NF – dB
2
0
2
357 2357 2357 2357
0.01
240
0.1 1.0 10
Frequency, f – kHz
PD -- Ta
ID=1mA
8
6
4
Noise Figure, NF – dB
2
f=1kHz
–mW
D
200
160
120
80
40
Allowable Power Dissipation, P
0
2
357 2357 2357 2357
0.1
50
40
1.0 10 100
Signal Source Resistance, Rg – kΩ
I
-- V
C
CE
450
µA
400
µA
500µA
–mACollector Current, I
C
30
20
Collector Current, I
10
0
0 0.4 1.00.80.60.2
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
160
140
120
BE
–mA
100
C
80
60
40
20
0
0 0.2 0.4 0.80.6 1.0 1.41.2
°C
Ta=75
°C
25°C
--25
Base-to-Emitter Voltage, VBE–V
1000
ITR10374 ITR10375
[TR]
350µA
µA
300
µA
250
µA
200
µA
150
µA
100
50µA
IB=0
ITR10376
[TR]
VCE=6V
ITR10378
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
I
12
10
C
50µA
45µA
–mA
8
40
C
6
4
Collector Current, I
2
0
020 504010 30
Collector-to-Emitter Voltage, VCE–V
h
Ta=75
25°C
1000
FE
2
7
5
3
2
--25°C
100
DC Current Gain, h
7
5
3
325
0.1
1.0
Collector Current, IC–mA
-- V
CE
µA
35µA
30µA
25µA
20µA
15µA
10µA
5µA
IB=0
-- I
FE
C
°C
32325
10
100
ITR10373
[FET]
[TR]
ITR10377
[TR]
VCE=6V
325
100
ITR10379
No.4983-4/6
Page 5
7
5
3
– MHz
T
2
100
7
5
Gain-Bandwidth Product, f
3
2
1.0 10
5
3
2
10
7
5
3
2
Output Capacitance, Cob – pF
1.0
7
5
10
7
5
3
(sat) – V
BE
2
Collector Current, IC–mA
1.0 10
Collector-to-Base Voltage, VCB-- V
f
-- I
T
52732
Cob -- V
5757 32
VBE(sat) -- I
C
CB
FC18
c
[TR] [TR]
VCE=6V f=1MHz
5732
100
ITR10380
[TR] [TR]
f=1MHz
5732
100
ITR10382
C
[TR] [TR]
IC / IB=10
5
3
2
10
7
5
3
Input Capacitance, Cib – pF
2
1.0
57 5732
3
2
1.0
7
5
(sat) – V
CE
3
2
0.1
7
5
Collector-to-Emitter
Saturation Voltage, V
3
2
1.0
250
200
1.0 10
Emitter-to-Base Voltage, VEB–V
Collector Current, IC–mA
–mW
C
150
-- V
ib
VCE(sat) -- I
723 5 72235
P
EB
C
°C
Ta=75
°C
--25
10 100
-- Ta
C
ITR10381
IC / IB=10
25°C
ITR10383
1.0
7
5
Base-to-Emitter
Saturation Voltage, V
3
1.0
°C
Ta= --25
°C
75
723 5 72235
Collector Current, IC–mA
10 100
25°C
ITR10384
100
50
Collector Dissipation, P
0
2006040 80 100 140120 160
Ambient Temperature, Ta – ˚C
ITR10385
No.4983-5/6
Page 6
FC18
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject to
change without notice.
PS No.4983-6/6
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