Sanyo FC18 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TR:NPN Epitaxial Planar Silicon Transistor
FET:N-Channel Junction Silicon FET
High-Frequency Amp, AM Amp,
Low-Frequency Amp Applications
Ordering number:ENN4983
FC18
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composed of 2 chips, one being equivalent to the
2SK2394 and the other the 2SC4639, in the
convertional CP package, improving the mounting
efficiency greatly.
· Drain and emitter are shared.
Electrical Connection
B S
E / D
CG
Package Dimensions
unit:mm
2122
[FC18]
1.9
0.95 0.95
54
3
0.60.6
1.6
1
2
0.4
2.9
1.1
0.8
0.16
0 to 0.1
2.8
1:Collector
2:Gate
3:Source
4:Emitter/Drain
5:Base
SANYO:XP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEF[
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollA
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
]sgnitaRnommoC[
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
· Marking:18
G
D
P
D
C
B
C
T
XSD
SDG
OBC
OEC
OBE
PC
Continued on next page.
51V
51–V
01Am
05Am
002Wm
55V
05V
6V
051Am
003Am
03Am
002Wm
003Wm
˚C
˚C
72101TN (KT)/52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/6
FC18
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEF[
egatloVnwodkaerBD-GV
tnerruCffotuCetaGI
egatloVffotuCV
tnerruCniarDI
ecnattimdArefsnarTdrawroFY|sf|VSDV,V5=
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
erugiFesioNFNVSDk1=gR,V5= ,Ω I
]RT[
tnerruCffottuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSgtsttiucriCtseTdeificepseeS57.0sµ
emiTllaFt
Note*:The FC18 is classified by I
021F0.60.02G0.010.23H0.61
as follows : (unit:mA)
DSS
I
SDG)RB(
G
V
SSG
V
)ffo(SG
V
SSD
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
V,Aµ01–=
0=51–V
SD
V,V01–=
SG
SD
SD
BC
BE
EC
EC
BC
0=0.1–An
SD
I,V5=
Aµ001=3.0–7.0–5.1–V
D
V,V5=
0=*0.6*0.23Am
SG
SG
SG
SG
I,V53=
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V6=
C
I,V6=
C
I,Am05=
B
I,Am05=
B
I,Aµ01=
0=55V
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
0=6V
C
zHk1=f,0=0283Sm
zHM1=f,0=0.01Fp
zHM1=f,0=9.2Fp
D
Am1=531004
Am01=002zHM
zHM1=f,V6=7.1Fp
Am5=80.04.0V
Am5=8.00.1V
tiucriCtseTdeificepseeS51.0sµ
tiucriCtseTdeificepseeS02.0sµ
sgnitaR
nimpytxam
zHk1=f,Am1=0.1Bd
tinU
Marking:18
I
rank:F, G, H
DSS
The specifications shown above are for each individual FET or transistor.
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
INPUT
50Ω
10IB1= --10IB2=IC=10mA
B1
I
B2
1kΩ
V
R
+
220µF470µF
OUTPUT
R
L
2kΩ
+
VCC=20VVBE= --5V
No.4983-2/6
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