SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amp,
Differential Amp Applications
Ordering number:EN5432
FC156
Features
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
Package Dimensions
unit:mm
2104A
· The FC156 is formed with two chips, being equivalent to the 2SC5226, placed in one package.
· Excellent in thermal equilibrium and in inter-chip
characteristics matching.
Electrical Connection
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
ecnereffiDegatloVrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFNVECI,V5=
Note:The specifications shown above are for each individual transistor.
Marking:156
C
C
T
EF
EB
T
| S2le |
| S2le |
OBC
OEC
OBE
tinu1 002Wm
V
OBC
V
OBE
V
EF
/llams(
V
)egral
-egral(
V
)llams
V
2
V
2
V
I,V01=
BC
BE
EC
EC
EC
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=09002
C
I,V5=
Am02=7.059.0
C
I,V5=
Am02=0.1Vm
C
I,V5=
Am02=57zHG
C
zHM1=f,V01=57.02.1Fp
zHM1=f,V01=5.0Fp
I,V5=
C
I,V2=
C
C
[FC156]
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
02V
01V
2V
07Am
003Wm
sgnitaR
nimpytxam
zHG1=f,Am02=921Bd
zHG1=f,Am3=8Bd
zHG1=f,Am7=0.18.1Bd
˚C
˚C
tinU
52098HA (KT)/71196YK (KOTO) TA-0737 No.5432-1/5
FC156
No.5432-2/5
FC156
No.5432-3/5
FC156
No.5432-4/5
FC156
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5432-5/5
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