Sanyo FC156 Specifications
52098HA (KT)/71196YK (KOTO) TA-0737 No.5432-1/5
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amp,
Differential Amp Applications
Ordering number:EN5432
FC156
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
02V
egatloVrettimE-ot-rotcelloCV
OEC
01V
egatloVesaB-ot-rettimEV
OBE
2V
tnerruCrotcelloCI
C
07Am
noitapissiDrotcelloCP
C
tinu1 002Wm
noitapissiDlatoTP
T
003Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2104A
[FC156]
Features
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC156 is formed with two chips, being equiva-
lent to the 2SC5226, placed in one package.
· Excellent in thermal equilibrium and in inter-chip
characteristics matching.
Electrical Connection
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Note:The specifications shown above are for each individual transistor.
Marking:156
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
retemaraPlobmySsnotidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V01=
E
0=0.1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V1=
C
0=01Aµ
niaGtnerruCCDh
EF
V
EC
I,V5=
C
Am02=09002
oitaRniaGtnerruCCDh
EF
/llams(
)egral
V
EC
I,V5=
C
Am02=7.059.0
ecnereffiDegatloVrettimE-ot-esaBV
EB
-egral(
)llams
V
EC
I,V5=
C
Am02=0.1Vm
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V5=
C
Am02=57zHG
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01=57.02.1Fp
ecnaticapaCrefsnarTesreveRerCV
BC
zHM1=f,V01=5.0Fp
niaGrefsnarTdrawroF
V
EC
I,V5=
C
zHG1=f,Am02=921Bd
V
EC
I,V2=
C
zHG1=f,Am3=8Bd
erugiFesioNFNV
EC
I,V5=
C
zHG1=f,Am7=0.18.1Bd
| S2le |
2
| S2le |
2
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
FC156
No.5432-2/5
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