Sanyo FC156 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amp,
Differential Amp Applications
Ordering number:EN5432
FC156
Features
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
Package Dimensions
unit:mm
2104A
· The FC156 is formed with two chips, being equivalent to the 2SC5226, placed in one package.
· Excellent in thermal equilibrium and in inter-chip
characteristics matching.
Electrical Connection
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
ecnereffiDegatloVrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
ecnaticapaCrefsnarTesreveRerCV
niaGrefsnarTdrawroF
erugiFesioNFNVECI,V5=
Note:The specifications shown above are for each individual transistor.
Marking:156
C
C
T
EF
EB
T
| S2le |
| S2le |
OBC
OEC
OBE
tinu1 002Wm
V
OBC
V
OBE
V
EF
/llams(
V
)egral
-egral(
V
)llams
V
2
V
2
V
I,V01=
BC
BE
EC
EC
EC
EC
BC
BC
EC
EC
0=0.1Aµ
E
I,V1=
0=01Aµ
C
I,V5=
Am02=09002
C
I,V5=
Am02=7.059.0
C
I,V5=
Am02=0.1Vm
C
I,V5=
Am02=57zHG
C
zHM1=f,V01=57.02.1Fp
zHM1=f,V01=5.0Fp
I,V5=
C
I,V2=
C
C
[FC156]
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
SANYO:CP6
02V
01V
2V
07Am
003Wm
sgnitaR
nimpytxam
zHG1=f,Am02=921Bd
zHG1=f,Am3=8Bd
zHG1=f,Am7=0.18.1Bd
˚C
˚C
tinU
52098HA (KT)/71196YK (KOTO) TA-0737 No.5432-1/5
FC156
No.5432-2/5
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