Ordering number:EN3280
FC126
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
(with Bias Resistance)
Features |
Package Dimensions |
·On-chip bias resistance (R1=47kΩ).
·Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
·The FC126 is formed with two chips, being equivalent to the 2SC3898, placed in one package.
·Excellent in thermal equilibrium and pair capability.
Electrical Connection
unit:mm
2066
[FC126]
C1:Collector 1
C2:Collector 2
B2:Base 2
EC:Emitter Common
B1:Base 1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
50 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
50 |
V |
Emitter-to-Base Voltage |
VEBO |
|
5 |
V |
Collector Current |
IC |
|
100 |
mA |
Peak Collector Current |
ICP |
|
200 |
mA |
Collector Dissipation |
PC |
1 unit |
200 |
mW |
Total Power Dissipation |
PT |
|
300 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditons |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=40V, IE=0 |
|
|
0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=5V, IC=0 |
|
|
0.1 |
µA |
DC Current Gain |
hFE |
VCE=5V, IC=10mA |
100 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=10V, IC=5mA |
|
250 |
|
MHz |
Output Capacitance |
Cob |
VCB=10V, f=1MHz |
|
3.3 |
|
pF |
C-E Saturation Voltage |
VCE(sat) |
IC=5mA, IB=0.25mA |
|
0.1 |
0.3 |
V |
C-B Breakdown Voltage |
V(BR)CBO |
IC=10µA, IE=0 |
50 |
|
|
V |
C-E Breakdown Voltage |
V(BR)CEO |
IC=100µA, RBE=∞ |
50 |
|
|
V |
Input OFF-State Voltage |
VI(off) |
VCE=5V, IC=100µA |
0.4 |
0.55 |
0.8 |
V |
Input ON-State Voltage |
VI(on) |
VCE=0.2V, IC=5mA |
0.8 |
2.0 |
4.0 |
V |
Input Resistance |
R1 |
|
33 |
47 |
61 |
kΩ |
|
|
|
|
|
|
|
Note:The specifications shown above are for each individual transistor.
Marking:126
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/2160MO, TS No.3280-1/2
FC126
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3280-2/2