Sanyo FC123 Specifications

Ordering number:EN3277

FC123

PNP Epitaxial Planar Silicon Composite Transistor

Switching Applications

(with Bias Resistance)

Features

Package Dimensions

·On-chip bias resistance (R1=47kΩ).

·Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

·The FC123 is formed with two chips, being equivalent to the 2SA1508, placed in one package.

·Excellent in thermal equilibrium and pair capability.

Electrical Connection

unit:mm

2067

[FC123]

E1:Emitter 1

B1:Base 1

C2:Collcector 2

E2:Emitter 2

B2:Base 2

C1:Collcetor 1

SANYO:CP6

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		–50	V
Collector-to-Emitter Voltage	VCEO		–50	V
Emitter-to-Base Voltage	VEBO		–5	V
Collector Current	IC		–100	mA
Peak Collector Current	ICP		–200	mA
Collector Dissipation	PC	1 unit	200	mW
Total Power Dissipation	PT		300	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditons		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=–40V, IE=0			–0.1	µA
Emitter Cutoff Current	IEBO	VEB=–5V, IC=0			–0.1	µA
DC Current Gain	hFE	VCE=–5V, IC=–10mA	100
Gain-Bandwidth Product	fT	VCE=–10V, IC=–5mA		200		MHz
Output Capacitance	Cob	VCB=–10V, f=1MHz		5.1		pF
C-E Saturation Voltage	VCE(sat)	IC=–5mA, IB=–0.25mA		–0.1	–0.3	V
C-B Breakdown Voltage	V(BR)CBO	IC=–10µA, IE=0	–50			V
C-E Breakdown Voltage	V(BR)CEO	IC=–100µA, RBE=∞	–50			V
Input OFF-State Voltage	VI(off)	VCE=–5V, IC=–100µA	–0.4	–0.55	–0.8	V
Input ON-State Voltage	VI(on)	VCE=–0.2V, IC=–5mA	–0.8	–2.0	–4.0	V
Input Resistance	R1		33	47	61	kΩ

Note:The specifications shown above are for each individual transistor.

Marking:123

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/2160MO, TS No.3277-1/2

FC123

No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use:

Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of May, 1998. Specifications and information herein are subject to

change without notice.

PS No.3277-2/2