Sanyo FC12 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
TR:NPN Epitaxial Plannar Silicon Transistor
FET:N-Channel Junction Silicon Transistor
High-Frequency Amp, AM Applications,
Low-Frequency Amp
Ordering number:ENN3482
FC12
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC12 is formed with two chips, being equivalent
to the 2SC4639, placed in one package.
· Common drain and emitter.
Electrical Connection
B S
E / D
CG
Package Dimensions
unit:mm
2075
[FC12]
1.9
0.950.95
54
3
0.60.6
1.6
2.8
1
2
0.4
2.9
1.1
0.8
0.16
0 to 0.1
C:Collector
G:Gate
S:Source
E/D:Emitter/Drain
B:Base
SANYO:CP5
Switching Time Test Circuit
I
V
R
B1
I
B2
R
B
+
220µF 470µF
+
VCC=20VVBE= --5V
OUTPUT
R
L
72301TN(KT)/52098HA (KT)/5132MH, HK No.3482-1/6
PW=20µs
D.C.≤1%
INPUT
50Ω
10IB1= --10IB2=IC=10mA
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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]TEF[
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollA
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
]sgnitaRnommoC[
noitapissiDlatoTTP 003Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Marking:12
G
D
P
D
C
B
C
FC12
XSD
SDG
OBC
OEC
OBE
PC
51V
51–V
01Am
05Am
002Wm
55V
05V
6V
051Am
003Am
03Am
002Wm
˚C
˚C
Electrical Characterisitics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEF[
egatloVnwodkaerBniarD-ot-etaGV
tnerruCffotuC-ot-etaGI
egatloVffotuCV
tnerruCniarDI
ecnattimdArefsnarTdrawroFY|sf|VSDV,V5=
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
erugiFesioNFNVSDk1=gR,V5= ,Ω I
]RT[
tnerruCffottuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Note*:The FC12 is classified by I
0.21F0.60.02G0.01
as follows : (unit:mA).
DSS
I
SDG)RB(
G
V
SSG
V
)ffo(SG
V
SSD
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
V,Aµ01–=
0=51–V
SD
V,V01–=
SG
SD
SD
BC
BE
EC
EC
BC
0=0.1–An
SD
I,V5=
Aµ001=2.0–6.0–4.1–V
D
V,V5=
0=*0.6*0.02Am
SG
SG
SG
SG
I,V53=
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V6=
C
I,V6=
C
I,Am05=
B
I,Am05=
B
I,Aµ01=
0=55V
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
0=6V
C
zHk1=f,0=5205Sm
zHM1=f,0=01Fp
zHM1=f,0=0.3Fp
D
Am1=531004
Am01=002zHM
zHM1=f,V6=7.1Fp
Am5=80.04.0V
Am5=8.00.1V
tiucriCtseTdeificepseeS51.0sµ
tiucriCtseTdeificepseeS57.0sµ
tiucriCtseTdeificepseeS02.0sµ
sgnitaR
nimpytxam
zHk1=f,Am1=5.1Bd
tinU
No.3482-2/6
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