Sanyo EC3202C Specifications

Ordering number : ENN6798

EC3202C

NPN Epitaxial Planar Silicon Transistor

EC3202C

Muting Circuit Applications

Features

• Ultrasmall-sized package, facilitates miniaturization

in end products.

•

Low output capacitance.

• Low collector-to-emitter saturation voltage.

• Low ON-resistance.

Package Dimensions

unit : mm

2184

[EC3202C]

0.5

0.2 0.2

0.05

3

2

0.05

(Bottom view)

4

1

0.3

0.3

0.05

0.05

0.6

1.0

1 : Base
2 : Emitter

0.6

0.8

Specifications

3 : Collector
4 : Collector

SANYO : E-CSP1008-4

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

25 V
15 V

5V
100 mA
200 mA

20 mA

150 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 3 pF

CBO
EBO

FE

VCB=15V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=2V, IC=5mA 800 3200
VCE=5V, IC=10mA 240 MHz

T

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

21401 TS IM TA-2711

No.6798-1/4

Unit

EC3202C

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA 14 30 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA 0.74 1.1 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
On-Resistance Ron IB=3mA, f=1MHz 0.9 Ω

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

=(--)10µA, IE=0 25 V
=1mA, RBE=∞ 15 V
=(--)10µA, IC=0 5 V

min typ max

Ratings

Electrical Connection (Top view)

Polarity mark (Top)

Unit

Base

Emitter

Collector

Collector

*Electrodes : Bottom

Polarity mark(Top)

Collector

Base

Emitter

I

-- V

100

90

80

70

-- mA
C

60

50

40

30

20

Collecotor Current, I

10

0

0 0.4 0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

160µA

180µA

200µA

C

CE

140µA

Collector-to-Emitter Voltage, VCE -- V

120

IC -- V

BE

Collector

I

-- V

120µA

100µA

80µA

60µA

IB=0

40µA

20µA

IT02788

10

9

8
7

-- mA
C

6
5

4
3

Collector Current, I

2
1

0

012345

C

Collector-to-Emitter Voltage, VCE -- V

5

h

FE

-- I

CE

C

VCE=2V VCE=2V

5.0µA

4.5µA

4.0µA

3.5µA

3.0µA

2.5µA

2.0µA

1.5µA

1.0µA

0.5µA

IB=0

IT02789

100

-- mA

80

C

60

40

Collecotor Current, I

20

0

0.2 0.4 0.6 0.8 1.0 1.2

0

Base-to-Emitter V oltage, VBE -- V

Ta=75°C

3

FE

2

Ta=75°C

25°C

1000

25°C

--25°C

IT02790

7

DC Current Gain, h

5

3

7

1.0

2

3

Collector Current, IC -- mA

--25°C

7

5

10

3

2

7

5

100

2

IT02791

No.6798-2/4