SANYO DTA6G-N, DTA6E-N, DTA6C-N Datasheet
DTA6-N
Ordering number : EN1874C
6A Bidirectional Thyristor
Silicon Planar Type
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3109MO, TS No.1874-1/3
Features
• Peak OFF-state voltage : 200 to 600V
• RMS ON-state current : 6A
• TO-220 package.
Absolute Maximum Ratings at Ta=25°C DTA6C-N DTA6E-N DT6AG-N unit
Repetitive Peak V
DRM
200 400 600 V
OFF-StateVoltage
RMS ON-State Current I
T(RMS)
Tc=104°C, single-phase →→ 6A
full-wave
Surge ON-State Current I
TSM
Peak 1 cycle, 50Hz →→ 60 A
Amperes Squared-Seconds ∫ i2T·dt 1ms≤t≤10ms →→ 18 A2s
Peak Gate Power Dissipation P
GM
f≥50Hz, duty≤10% →→ 5W
Average Gate Power Dissipation P
G(AV)
→→ 0.5 W
Peak Gate Current I
GM
f≥50Hz, duty≤10% →→ ±2 A
Peak Gate Voltage V
GM
f≥50Hz, duty≤10% →→±10 V
Junction Temperature Tj →→125 °C
Strage Temperature Tstg → –40 to +125 °C
Weght →→ 1.8 g
Electrical Characteristics at Ta=25°C min typ max unit
Repetitive Peak I
DRM
Tj=125°C, VD=V
DRM
2mA
OFF-State Current
Peak ON-State Voltage V
TM
ITM=9A 1.5 V
Critical Rate of Rise of dv/dt Tj=125°C, VD=200V (C), 10 V/µs
OFF-State Voltage 400V (E to G)
Holding Current I
H
RL=100Ω 50 mA
Gate Trigger Current (I) I
GT
VD=12V, RL=20Ω 30 mA
(II) I
GT
VD=12V, RL=20Ω 30 mA
(III) I
GT
VD=12V, RL=20Ω 50 mA
(IV) I
GT
VD=12V, RL=20Ω 30 mA
Gate Trigger Voltage (I) V
GT
VD=12V, RL=20Ω 2V
(II) V
GT
VD=12V, RL=20Ω 2V
(III) V
GT
VD=12V, RL=20Ω 2V
(IV) V
GT
VD=12V, RL=20Ω 2V
Gate Nontrigger Voltage V
GD
Tc=125°C, VD=Rated voltage 0.2 V
Thermal Resistance Rth(j-c) Between junction and case, AC 2 °C/W
* : The gate trigger mode is shown below.
Package Dimensions 1155A
(unit : mm)
Trigger mode T2 T1 G
I + – +
II + – –
III – + +
IV – + –
DTA6-N
No.1874-2/3
ON-State Voltage, VT– V
ON-State Current, I
T
– A
Cate Current, IG– A
Gate Voltage, V
G
– V
RMS ON-State Current, I
T(RMS)
– A
Average ON-State Power Dissipation, P
T
(AV) – W
RMS ON-State Current, I
T(RMS)
– A
Maximum Allowable
Ambient Temperature, Ta max – °C
Cate Current, IG– mA
Gate Voltage, V
G
– V
Number of Cycles at 50Hz, n
Surge ON-State Current, I
TSM
– A
RMS ON-State Current, I
T(RMS)
– A
Maximum Allowable
Case Temperature, Tc max – °C
Case Temperature, Tc – °C
Gate Trigger Current, I
GT
– mA
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