SANYO DTA1E, DTA1C Datasheet

DTA1

Ordering number : EN2283B

1.0A Bidirectional Thyristor

Silicon Planar Type

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O0797GI/3089MO, TS No.2283-1/3

Features

• Low AC power control use.

• Peak OFF-state voltage : 200 to 400V

• RMS ON-state current : 1A

• TO-92 package.

Absolute Maximum Ratings at Ta=25°C DTA1C DTA1E unit

Repetitive Peak V

DRM

200 400 V
OFF-StateVoltage
RMS ON-State Current I

T(RMS)

Tc=74°C, single-phase → 1.0 A
full-wave

Surge ON-State Current I

TSM

Peak 1 cycle, 50Hz → 8A

Amperes Squared-Seconds ∫ i2T·dt 1ms≤t≤10ms → 0.32 A2s
Peak Gate Power Dissipation P

GM

f≥50Hz, duty≤10% → 1W

Average Gate Power Dissipation P

G(AV)

→ 0.1 W

Peak Gate Current I

GM

f≥50Hz, duty≤10% → ±0.5 A

Peak Gate Voltage V

GM

f≥50Hz, duty≤10% → ±6 V

Junction Temperature Tj → 125 °C
Strage Temperature Tstg –40 to +125 °C
Weght → 0.2 g

Electrical Characteristics at Ta=25°C min typ max unit

Repetitive Peak I

DRM

Tj=25°C, VD=V

DRM

10 µA
OFF-State Current
Peak ON-State Voltage V

TM

ITM=1.5A 1.5 V

Holding Current I

H

VD=12V, gate open 10 mA

Gate Trigger Current* (I) I

GT

VD=12V, RL=20Ω 5mA

(II) I

GT

VD=12V, RL=20Ω 5mA

(III) I

GT

VD=12V, RL=20Ω 10 mA

(IV) I

GT

VD=12V, RL=20Ω 5mA

Gate Trigger Voltage* (I) V

GT

VD=12V, RL=20Ω 2V

(II) V

GT

VD=12V, RL=20Ω 2V

(III) V

GT

VD=12V, RL=20Ω 2–V

(IV) V

GT

VD=12V, RL=20Ω 2V

Gate Nontrigger Voltage V

GD

Tc=125°C, VD=V

DRM

0.2 – V

Thermal Resistance Rth(j-c) Between junction and case, AC 40 °C/W

* : The gate trigger mode is shown below.

Trigger mode T2 T1 G

I + – +

II + – –

III – + +

IV – + –

Package Dimensions 1192B
(unit : mm)

DTA1

No.2283-2/3

ON-State Voltage, VT– V

ON-State Current, I

T

– A

Gate Current, IG– V

Gate Voltage, V

G

– V

RMS ON-State Current, IT(RMS) – A

Average ON-State Power Dissipation, P

T

(AV) – W

RMS ON-State Current, IT(RMS) – A

Maximum Allowable

Case Temperature, Tc max – °C

Case Temperature, Tc – °C

Gate Trigger Voltage, V

GT

– V

Case Temperature, Tc – °C

Gate Trigger Current, I

GT

– mA

RMS ON-State Current, IT(RMS) – A

Maximum Allowable

Ambient Temperature, Ta max – °C

Number of Cycles at 50Hz, n

Surge ON-State Current, I

TSM

– A