Sanyo DLN10 Specifications

Ordering number:EN4729

DLN10

Silicon Diffused Junction Type

Low-loss Rectifier

Features

· Fast reverse recovery time, small switching loss.

· Peak reverse voltage : V =200 to 400V.

RM

· Average rectified current : I=1.0A.

O

Package Dimensions

unit:mm

1264

[DLN10]

 

 

 

 

 

 

 

 

 

 

C:Cathode

Specifications

 

 

 

 

 

 

 

 

 

A:Anode

 

 

 

 

 

 

 

 

 

 

 

Absolute Maximum Ratings at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

Conditions

 

DLN10C

 

DLN10E

Unit

 

 

 

 

 

 

 

 

 

 

Peak Reverse Voltage

VRM

 

 

 

 

200

 

400

V

Average Rectified Current

IO

[DLN10C] Ta=25˚C

 

 

1.0

 

 

 

A

 

 

[DLN10E] Ta=25˚C

 

 

 

 

 

0.9

A

 

 

 

 

 

 

 

 

 

 

 

 

 

TN=137˚C

 

 

 

 

 

1.0

A

 

 

 

 

 

 

 

 

 

 

 

Surge Forward Current

IFSM

50Hz sine wave, non-repetitive, 1 cycle peak value

 

 

 

 

25

A

Junction Temperature

Tj

 

 

 

 

 

 

150

˚C

 

 

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

 

 

 

 

 

–55 to +150

˚C

 

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

Conditions

 

 

Ratings

Unit

 

 

 

 

 

 

 

 

 

 

 

 

min

 

typ

 

max

 

 

 

 

 

 

 

 

 

 

 

 

 

[DLN10C]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Voltage

VF

IF=1A

 

 

 

 

 

0.98

V

Reverse Current

IR

VR=200V

 

 

 

 

 

10

µA

Reverse Recovery Time

trr

IF=0.5A, IR=1A

 

 

 

 

 

35

ns

Thermal Resistance

Rth(j-N)

Junction-Lead

 

 

 

 

 

10

˚C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

Rth(j-a)

Juntion-Ambeient

 

 

 

 

 

113

˚C/W

 

 

 

 

 

 

 

 

 

 

 

 

[DLN10E]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Voltage

VF

IF=0.9A

 

 

 

 

 

1.3

V

Reverse Current

IR

VR=400V

 

 

 

 

 

10

µA

Reverse Recovery Time

trr

IF=0.5A, IR=1A

 

 

 

 

 

50

ns

Thermal Resistance

Rth(j-N)

Junction-Lead

 

 

 

 

 

10

˚C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

Rth(j-a)

Juntion-Ambient

 

 

 

 

 

113

˚C/W

 

 

 

 

 

 

 

 

 

 

 

 

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

53098HA (KT)/91494MO AX-8450 No.4729-1/2

Sanyo DLN10 Specifications

DLN10

No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use:

Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of May, 1998. Specifications and information herein are subject to

change without notice.

PS No.4729-2/2

Loading...