Sanyo DL-3150-103 Specifications
Ordering number : EN6090
DL-3150-103
Compact Flat Package Type Laser Diode
Overview
DL-3150-103 is newly developed compact flat package type
lasers, which is much different from conventional stem type
lasers. The new structure of the frame lead type package
enables optical systems to be light weighted and small-sized.
DL-3150-103 is suitable for applications such as compact
discs, CD-ROM systems, and video disc systems.
Features
• Compact flat package
• Index guided type
• Pin photodiode built-in for light output monitor
Infrared Laser Diode
DL-3150-103
Package Dimensions
3.4±0.12
3.7±0.15
0
+0.1
2R0.7
3.2
2–C0.5
1.6
0
6.8
–0.1
4.2
(
0.7
0.7±0.12
1.9
1.4±0.12
3.4 1.85.0±0.5
3.0±0.1
–
2
3
1.0
3– 0.4±0.1
)
1.6
Tolerance : ±0.2
Unit : mm
LD facet
0
°
0.2max
2
–
5
±
1
°
Pin No.
321
Frame type
Absolute Maximum Ratings at Tc=25°C
Parameter Symbol Ratings Unit
Light Output CW Po 5 mW
Reverse Voltage
Laser
PIN 30
VR
2
V
Operating Temperature T opr ---10 to +70 °C
Storage T emperature Tstg ---40 to +85 °C
Electrical Connection
13
LD PD
2 power supply system
Electrical and Optical Characteristics at Tc=25°C
Parameter Symbol Condition Min. Typ. Max. Unit
Threshold Current Ith CW --- 35 50 mA
Operating Current Iop Po=3mW --- 45 60 mA
Operating Voltage Vop Po=3mW --- 1.8 2.3 V
Lasing W avelength
Beam 1) Perpendicular
Divergence Parallel
Off Axis Perpendicular ∆θ ⊥ --- --- --- ±3 deg.
Angle Parallel ∆θ // --- --- --- ±2 deg.
Differential Efficiency dPo/dIop --- 0.18 --- --- mW/mA
Monitoring Output Current Im Po=3mW 0.05 0.20 0.40 mA
Astigmatism As Po=3mW --- 12 --- µm
λ
p Po=3mW --- 790 805 nm
θ
⊥ Po=3mW 25 35 40 deg.
θ
// Po=3mW 8 10 14 deg.
2
1) Full angle at half maximum Note : The above product specification are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI, (IM
)
No.6090 1/3
Characteristics
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DL-3150-103
Output power vs. Forward current
6
5
4
3
2
1
Output power Po (mW)
0
0
Forward current IF (mA)
Monitoring current vs. Output power
0.5
Tc=25°C
0.4
Vr(PD)=5V
25°C
40
60°C
6020
70°C
80
100
Threshold current vs. Temperature
100
80
60
Ith (mA)
40
20
Threshold current
10
01020304050
Temperature Tc (°C)
Beam divergence
1.0
Po=3mW
Tc=25°C
0.8
60
70
0.3
0.2
0.1
Monitoring current Im (mA)
0
0123
Output power Po (mW)
Lasing wavelength vs. Temperature
800
Po=3mW
795
790
785
Lasing wavelength λp (nm)
780
0
20 30 504010 60
Temperature Tc (°C)
45
70
0.6
0.4
Relative intensity
0.2
0
-40 -30 -20 -10 0 10 20 30 40
Angle θ (deg.)
Lasing wavelength vs. Output power
Po=5mW
Po=3mW
Relative intensity
Po=1mW
780 785 790 795
Lasing wavelength λp (nm)
θ ⊥
θ //
Tc=25°C
No.6090 2/3
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