Samsung KS7308 Datasheet
KS7308 FCM
GENERAL DESCRIPTION
FCM(Frequency Conversion Memory) is the high
speed line memory that has two 1024X10bits memory
banks. KS7308 is designed as low power consumption by
CMOS technology. KS7308 is used for camcorder with
digital image stabilizer feature.
FEATURES
- 1024X10bits 2 bank Line memory.
- Independent Read/Write Operation.
- Programmable Read Start Address and
Write Start Address.
- HD Pre-counter for Horizontal blanking.
- Serial-Interface Circuit
- CMOS Double metal technology
- 5V Power supply
BLOCK DIAGRAM
DIO- DI9 (from A/D)
WCK (from TG)
RCK (from TG)
WEN (from TG)
HD (from TG)
VD (from TG)
RSTN(from external)
10
48-QFP-0707
ORDRING INFORMATION
Device Package Operating Temperature
KS7308 48-QFP-0707
10
Momory
Control
0 ~ 70°C
DO0 - DO9
( to DCP )
Momory
Bank
TEST1
TEST2
SCS (from MICOM)
SCK (from MICOM)
SI (from MICOM)
SO (from MICOM)
SIO
( Serial I/O )
HOE
ACTO
NTTO
TOPC
KS7308 FCM
PIN DESCRIPTION
PIN NO. Symbol I/O Description Note
1 VDD1 - Power Supply (5V) vdd5p
2 WCK I Memory write clock from TG
3 RCK I Memory read clock from TG
4 WEN I Memory write enable from TG
5 HD I Horizontal Driving pulse from TG
6 VD I Vertical Driving pulse from TG
7 VDD3 - Power Supply (5V) vdd5i
8 GND3 - Ground vssi
9 RSTN I Reset
10 SCSN I SIO enable from MICOM
11 SCK I SIO clock from MICOM
12 SI I SIO data input from MICOM
13 SO O SIO data output to MICOM
14 DO0 O Data output bit0
15 DO1 O Data output bit1
16 DO2 O Data output bit2
17 DO3 O Data output bit3
18 DO4 O Data output bit4
19 VDD4 - Power Supply (5V) vdd5o
20 GND4 - Ground vsso
21 DO5 O Data output bit5
22 DO6 O Data output bit6
23 DO7 O Data output bit7
24 DO8 O Data output bit8
25 DO9 O Data output bit9
26 HOE O Horizontal odd/even signal output
27 NTTO O Test output (Vin test)
28 ACTO O Test output (Vin test)
29 TOPC I Test input (ACTO control)
30 VDD5 - Power Supply (5V) vdd
31 GND5 - Ground vdd5o
32 TEST0 I Test input (Mode control)
33 TEST1 I Test input (Mode)
34 VDD6 - Power Supply (5V) vdd5p
35 GND6 - Ground vssp
36 DI9 I Data input bit9
37 DI8 I Data input bit8
38 DI7 I Data input bit7
39 DI6 I Data input bit6
40 DI5 I Data input bit5
41 DI4 I Data input bit4
42 VDD1 - Power supply (5V) vdd5i
43 GND1 - Ground vssi
44 DI3 I Data input bit3
45 DI2 I Data input bit2
46 DI1 I Data input bit1
47 DI0 I Data input bit0
48 GND2 - Ground vssp
KS7308 FCM
TEST1 TEST0 TEST Mode
0 0 Normal operation
0 1 Memory Function Test
1 0 SRAM-A Read/Write Test
1 1 SRAM-B READ/Write Test
PIN ASSIGNMENT
T
T
E
E
G
D
N
I
D
9
6
36 35 34 33 32 31 30 29 28 27 26 25
S
V
T
D
I
D
G
S
N
T
D
0
5
T
A
O
V
P
D
C
D
N
C
T
H
T
T
O
O
D
O
O
E
9
D 18
D 17
D 16
D 15
D 14
A D D 1
G N D 1
D 13
D 12
D 11
D 10
G N D 2
37
38
39
40
41
W
E
N
KS7308
HDVDV
G
D
D
3
G
N
N
D
D
3
3
42
43
44
45
46
47
48
1 2 3 4 5 6 7 8 9 10 11 12
V
W
D
D
2
R
C
C
K
K
24
D O 8
23
D O 7
22
D O 6
21
D O 5
20
G N D 4
19
V D D 4
18
D O 4
D O 3
17
16
D O 2
15
D O 1
14
D O 0
S O
13
S
S
C
S
N
S
C
I
K
KS7308 FCM
*
*
*1, *
ABSOLUTE MAXIMUM RATINGS
Characteristics Symbol Rating Unit
Storage temperature Tstg -40 ~125
Operating temperature Topr 0 ~ 70
Supply voltage Vdd -0.3 ~ 7.0 V
Input voltage Vin -0.3 ~ Vdd +0.3 V
ELECTRICAL CHARACTERISTICS (Vdd = 4.75 ~ 5.25V Ta = +25°C)
Characteristics Symbol Condition Min Typ Max Unit
Low level input voltage VIL - - 0.3Vdd V
High level input voltage VIH 0.7Vdd - V
Low level output voltage
1
Low level output voltage
2
High level output voltage
2
Input Low current IIL Vin = Vss(Gnd) -10 - +10 uA
Input High current IIH Vin = Vdd -10 - +10 uA
Output leakage current IOZ -10 - +10 uA
Supply current Idd Vin = Vdd - - 40 mA
NOTE : *1 = NTTO,ACTO
*2 = SO, DO [ 9 : 0 ], HOE
VOL1 IOL = 4mA - - 0.4 V
VOL2 IOL = 1mA - - 0.4 V
VOH IOH = 1mA 2.4 - - V
°C
°C
Loading...