Datasheet SDU9435A Datasheet (SamHop Microelectronics)

S DU9435A

S amHop Microe lec tronics C orp.

Augus t , 2002

P -C hannel E nhancement Mode F ield E ffect T ransistor

PR ODUC T S UMMAR Y

VDS S

-30V

ID

-10A

R DS (O N) ( m

40 @ V GS = -10V

67 @ V GS = -4. 5V

G

S

S DU S E R IE S
TO -252AA (D-P AK )

W

) T YP

D

AB S OLUT E MAXIMUM R ATING S (TC=25 C unles s otherwise noted)

F E ATU R E S

S uper high dens e cell des ign for low R

R ugged and reliable.

TO-252 P acka ge.

D

G

S

DS (O N

).

P arameter

Drain-S ource Voltage

G ate-S ource Voltage 20

Drain C urrent-C ontinuous @ TJ =125 C

-P uls ed

a

Drain-S ource Diode F orward C urrent 1.9

Maximum P ower Diss ipation

@ T c=25 C

S ymbol

V

DS

V

G S

I

D

I

DM

I

S

P

D

-30

-10

-30

Derate above 25 C

Operating and S torage

Temperature R ange

TJ, T

S TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Therma l R es istance, J unction-to-C as e

Therma l R es istance, J unction-to-Ambient

R

R

J C

J A

Limit Unit

V

V

A

A

A

2. 5

3

50

W

C

C

C

/W

/W

1

S DU9435A

E LE C T R IC AL C HAR AC TE R IS T IC S (T C 25 C unles s otherwis e noted)

P arameter

S ymbol

=

C ondition

Min

Typ

C

Max

Unit

OF F C HAR AC TE R IS TIC S

5

V

G S

Drain-S ource B reakdown Voltage

Zero G ate Voltage Drain C urrent

G ate-B ody Leakage

ON C HAR AC TE R IS TIC S

b

G ate T hreshold Voltage

Drain-S ource On-S tate R es istance

On-S tate Drain C urrent

0V, ID -250uA

B V

DS S

I

DS S

I

G S S

V

G S (th)

R

DS (ON)

I

D(O N )

g

F S

c

VDS -24V, V

V

G S

V

DS VG S

V

G S

V

G S

V

DS

V

DS

=

=

= =

=

=

=

=

= -5V, V

= =

G S

20V, VDS 0V

, ID = -250uA

D

D

G S

D

=

=

= -10V

-10V, I

-4.5V, I

-15V, I

0V

=

-5.3A

-4.2A

- 5.3A

-30

-1 -1.5 -3

-20

40

67

9

-1

100

50

90

V

uA

nA

V

m-ohm

m-ohm

A

SF orward Trans conductance

DY NAMIC C HAR AC TE R IS TIC S

Input C apacitance

Output C apacitance

R everse Trans fer C apacitance

S WIT C HING C HAR AC TE R IS TIC S

Turn-On Delay T ime

R ise T ime

Turn-Off Delay T ime

F all T ime

Total G ate C ha rge

G ate-S ource C harge

G ate-Drain C harge

c

C

IS S

C

OS S

C

R S S

t

D(O N )

t

t

D(O F F)

t

Q

Q

Q

V

DS

f =1.0MH

VD = -15V,

r

f

ID = -1A,
V

G E N

R

G E N

VDS =-15V,ID = -5.3A,V

g

VDS =-15V,ID = -5.3A,V

gs

gd

VDS =-15V, ID = -5.3A,
V

G S

2

=-15V, V

Z

= - 10V,

= 6 -ohm

=-10V

G S

= 0V

G S

G S

=-10V

=-4.5V

860

470

180

20 ns

9

10 40

37

90

23 110

15

20

10.5

8.6

3

4

P

F

P

F

P

F

ns

ns

ns

nC

nC

nC

nC

S DU9435A

E LE C T R IC AL C HAR AC TE R IS T IC S (TC=25 C unles s otherwis e noted)

P arameter

S ymbol

C ondition

Min

Typ

C

Max

Unit

DR AIN-S OUR C E DIO DE C HAR AC T E R IS T IC S

Diode F orwa rd Voltage

Notes

a.P uls e Tes t:P uls e W idth 300us , Duty C ycle 2% .
b.G uaranteed by des ign, not s ubject to production tes ting.

25

-V GS =10, 9,8, 7V

20

15

10

5

-ID , Dra in C urrent (A )

0

0 0. 5 1. 0 1. 5 2. 0 2. 5 3 .0

-V DS , D rain-to-S ource Voltage (V)

F igure 1. O utput C hara cteris tics F igure 2. Trans fer C haracteris tics

V

S D

6V

5V

4V

3V

b

V

G S

= 0V, Is =-5. 3A

20

16

12

8

4

-ID , Dra in C urrent (A )

0

0 0 .5 1 1. 5 2 2. 5 3

-0.84

-55 C

25 C

T j=125 C

-V GS , Ga te-to-S ource Voltage (V )

-1.3

5

V

300 0

250 0

200 0

150 0

100 0

C , C apa citance (pF )

500

0

0 5 10 15 20 25 30

-V DS , D rain-to S ource Voltage (V)

F igure 3. C apa citance

C iss

C oss

C rss

1. 8
VGS =-1 0V

ID=-5. 3A

1. 6

1. 4

1. 2

1. 0

On-R es istance(O hms)

(N ormalize d)

0. 8

R DS (O N),

0. 6

-50 0 50 100 150

Tj, J unction T empera ture ( C )

F igure 4. O n-R es is tance Va ria tion with

Temperature

3

S DU9435A

1.09

VDS=V

1.06

1.03

1.00

5

0.97

Vth, Normalized

0.94

G a te-S ource T hre s hold V oltage

0.91

-50 -25 0 25 50 75 10 0 125 150

G S

ID=-250uA

Tj, J unction T empera ture ( C )

F igure 5. G ate T hres hold V ariation

with T emperature

15

12

9

6

1.15

ID=-250uA

1.10

1.05

1.00

0.95

0.90

B V DS S , Normaliz ed

0.85

Dra in-S ource B reakdown V oltage

-50 -25 0 25 50 75 100 125 150

Tj, J unction T empera ture ( C )

F igure 6. B rea kdown V oltage V ariation

with T emperature

20. 0

V

G S

=0V

10. 0

3

gFS , T rans conductance (S )

0

0 5 10 15 20

-ID S, Drain-S ource C urrent (A)

VDS=-15V

F igure 7. T ransconductance V a ria tion

with Drain C urrent

10

VDS=-15V

8

ID=-5. 3A

6

4

2

VG S, Gate to S ource V oltage (V )

0

0 2 4 6 8 10 12 14 16

Qg, T otal G ate C ha rge (nC )

F igure 9. G ate C harge

4

-Is , S ource-dra in curre nt (A)

1.0

0.4 0.6 0.7 0.9 1.1 1.3

-V S D, B ody D iode F orward Voltage ( V )

F igure 8. B ody Diode F orward V oltage

Variation with S ource C urrent

50

10

(O N) L imit

S

D

R

1

V

G S

0.1

-ID , D ra in C urrent (A)

0.03

=-10V

S ingle P ulse

TA=25 C

0.1 1 10 30 50

-V D S, Dra in-S ource V oltage (V )

10ms

100 m

s

1s

DC

F igure 10. Maximum S afe
O pera ting Area

S DU9435A

DD

-V

on

t

d(off)

t

r

d(on)

R

IN

V

V

G S

G EN

R

G

L

D

OU T

V

S

t

OU T

V

IN

V

10%

t

90%

10% 10%

50% 50 %

INV E R TE D

P ULS E W IDT H

90%

t

off

f

t

90%

6

F igure 11. S witching T est C ircuit

2

1

D=0. 5

0. 2

0. 1

0. 1

0. 05

0. 02

0. 01

-5

10

0. 01

S ING LE P UL S E

-4

10

r(t), Normalize d E ffective

T rans ient Thermal Impedanc e

F igure 13. N ormalized T hermal T rans ient Impeda nce C urve

F igure 12. S witching W aveforms

-3

10

S quare W ave P ulse Duration (s ec)

-2

10

DM

P

1

t

2

t

1. R θJA (t)=r (t) * R θJA

2. R θJA=S ee Data shee t

3. TJ M-T A = PDM* R θJA ( t)

4. Duty C ycle , D=t1/t2

-1

10

1 10

5