Datasheet SE1050W Datasheet (SIGE)

R f

Ω

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Applications

§ SONET/SDH-based transmission systems, test
equipment and modules

§ OC-192 fibre optic modules and line termination

§ 10 Gigabit Ethernet

§ Fibre Channel

§ Serial data systems up to 10.7 Gb/s

Features

§ Single +5 V power supply

§ Power dissipation = 430 mW (typ)

§ Input noise current = 1.4 µA rms when used with

a 0.2 pF detector

§ Transimpedance gain = 1.2 kΩ into a 50 Ω load
(differential)

§ Input current overload = 2.3 mA pk (+1.1 dBm for

0.9 A/W responsivity - meets 10 Gigabit Ethernet
specification)

§ Wide linear dynamic range of 17 dB (typ)

§ 50 Ω single-ended or 100 Ω differential wire bond

selectable outputs

§ Bandwidth (-3 dB) = 9.8 GHz

§ Operates at OC-192 / STM -64 up to 10.7 Gb/s

NRZ rates

§ Power supply rejection for both single ended and
differential modes of operation

§ Optimized for PIN photodetectors

§ Minimal external components, supply decoupling

only

§ Operating junction temperature range = -40°C to

+100°C

§ Equivalent to Nortel Networks AE99

Final

Product Description

SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.

SiGe Semiconductor’s SE1050W is a fully integrated
silicon bipolar transimpedance amplifier, providing
wideband, low noise preamplication of signal current
from a PIN photodetector. It features differential
outputs. A decoupling capacitor on the supply is the
only external component required. A system block
diagram is shown after the functional description, on
page 3.

Noise performance is optimized for 10 Gb/s operation,
with a calculated rms noise based sensitivity of
–20 dBm for 10

0.20 pF capacitance and a responsivity of 0.9 A/W,
with an infinite extinction ratio source.

-10

bit error rate, using a detector with

Ordering Information

Type Package Remark

SE1050W Bare Die Shipped in

Waffle Pack

Functional Block Diagram

VCC or +ve supply

Input

Current

TZ_IN

1.29 V

Bandgap
Reference

Power
Supply
Rejection

Tz Amp

Wire bond option for single -ended operation

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Output
Driver

SE1050
TzAmp
10 Gb/s

50 Ω

50 Ω

50

OUTP

OUTN

ACGND

Bondpad Diagram

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

GND GND ACGND

TZ_IN

2

3

1

1

13

Top

View

7

GND

VCC2 GND VCC1 VCC1 GND

Bondpad Description

Pad No. Name Description

1 GND Negative supply (0V).

OUTP

12

OUTN

11

9 8 6 5 4

10

VCC2

2 GND Negative supply (0V).
3 TZ_IN Input pad (connect to photodetector anode).
4 GND Negative supply (0V).
5 GND Negative supply (0V).
6 GND Negative supply (0V).
7 VCC1 Positive supply (+5 V).
8 VCC1 Positive supply (+5 V).

9 VCC2

10 VCC2
11 OUTN Negative differential voltage output; leave unconnected for single-ended operation.

12 OUTP Positive differential or single-ended voltage output.
13 ACGND

Positive supply (+5 V) – Note: This is a separate supply for the output driver stage
only.

Positive supply (+5 V) – Note: This is a separate supply for the output driver stage
only.

Bond option: Connected to external capacitor to ground for single-ended operation
(recommended 1 nF); unconnected for differential operation.

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Functional Description
Amplifier Front-End

The transimpedance front-end amplifies the current
from a PIN photodetector, anode connected to pad
TZ_IN, to produce a differential output voltage with
the feedback resistor Rf determining the level of
amplification (see the functional block diagram on
page 1).

The input pad TZ_IN is biased at nominally 1.29 V
above ground, allowing the photodetector to have a
wide reverse-bias by connecting the cathode to VCC.
This enables single rail operation and normally
ensures that the PIN operates in its constant, low­capacitance region.

The output stage has its own supply connection
VCC2 (+5 V) to maintain integrity of the high-speed
signal path. The output stage shares the GND (0 V)
connection with the remainder of the circuitry, which
has a separate supply connection VCC1 (+5 V).

Output Driver Stage

The output driver acts as a buffer stage, capable of
swinging up to 1.1 V pk-pk differential into a 100 Ω
load.

System Block Diagram

Final

The output can be configured in a differential or
single-ended mode. For differential opera tion, the pad
ACGND is not wire bonded and the circuit provides a
fully balanced 100 Ω output, on the pins OUTP and
OUTN. For single-ended operation, the ACGND pad
is required to be wire bonded to an external capacitor
to ground (recommend 1 nF). Under these
circumstances, OUTP operates as a single-ended
50 Ω output. In both cases, increasing optical input
level gives a positive-going output signal on the
OUTP pin.

Power Supply Rejection

An on-chip power supply rejection circuit is used to
achieve both single-ended and differential rejection
from the +5 V VCC rail. This rejection ensures that
performance is not degraded by noise on the power
supply. The circuit achieves a power supply rejection
on the outputs of 38 dB for single-ended and 24 dB
for differential operation, up to 100 kHz. The use of
external decoupling will help to remove any unwanted
signals at higher frequencies.

Data

Laser

Driver

SE1150/51/52

SE1250

Post

Amplifier

LOS

2

Receiver Module

SE1050W

TZ

Amplifier

PIN

Ck In

Data

Clock

Mux

CDR &

Demux

2

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

Absolute Maximum Ratings

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.

Symbol Parameter Min Max Unit

VCC Supply Voltage –0.7 6.0 V
VIO Voltage at any input or output –0.5 VCC+0.5 V

I

IO

IIO Current sourced into pin TZ_IN –5 5 mA

Current sourced into any input or output except
TZ_IN

–20 20 mA

V

ESD

V

ESD

Tstg Storage Temperature –65 150

Electrostatic Discharge (100 pF, 1.5 kΩ) except
TZ_IN and ACGND

Electrostatic Discharge (100 pF, 1.5 kΩ) pins
TZ_IN and ACGND

–2 2 kV

–0.25 0.25 kV

Recommended Operating Conditions

Symbol Parameter Min Typ Max Unit

VCC Supply Voltage 4.7 5.0 5.3 V
Tj Operating Junction Temperature –40 100

DC Electrical Characteristics

Symbol Parameter Min Typ Max Unit

ICC Supply Current 86 130 mA
Vin Input Bias Voltage 1.28 1.29 1.34 V
Vout Output Bias Voltage 3.0 V
Rout Output Resistance 38 50 62

°C

°C

Ω

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

AC Electrical Characteristics

Symbol Parameter Min Typ Max Unit

BW (3dB) Small Signal Bandwidth at –3dB point 8 9.8 13 GHz

Final

Tz

Dri Input Data Rate 10.7 Gb/s
Voutmax Maximum Differential Output Voltage 1.1 V pk-pk
Flf Low Frequency Cut -off 37 47 kHz

PSRR

PSRR

Olim

DR

lOL Input Current before overload (10 Gb/s NRZ data) 2300
Pol Optical Overload +1.1 dBm
Nrms Input Noise Current (in 10 GHz) 1.4 2.0

DC and AC electrical characteristics are specified under the following conditions:

Supply Voltage (VCC).........................................4.7 V to 5.3 V

Junction Temperature (Tj) ..................................–40°C to 100°C

Load Resistor (RL)...............................................50 Ω AC coupled via 100 nF, for each output

Photodetector Capacitance (Cd)......................0.2 pF

Input bond wire inductance (Li) ........................1.1 nH

(Must comply with recommended bonding arrangement that will be provided as an application note)

Photodetector responsivity ................................0.9 A/W

Photodetector series resistance........................10 Ω max

Transimpedance (Tz) measured with 0 > lin < 580 µA pk-pk, at 100 MHz

Differential Transimpedance (50 Ω on each output,
f = 100 MHz)

Power Supply Rejection Ratio (differential) up to
100 kHz

Power Supply Rejection Ratio (single-ended) up to
100 kHz

Onset of Limiting (mean input current from
photodetector)

Linear Dynamic Range (sensitivity to onset of
limiting)

0.75 1.2 1.8 kΩ

16 24 dB

30 38 dB

290 460

17 dB

µA mean

µA pk-pk

µA rms

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Bondpad Configuration

The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in
microns (µm).

Final

Pad No. Name

1 GND 234.9 658.0
2 GND 121.7 658.0
3 TZ_IN 0 510.3
4 GND 0 0
5 GND 116.5 0
6 GND 233.5 0
7 VCC1 365.2 0
8 VCC1 480.2 0

9 VCC2 693.0 0
10 VCC2 808.0 0
11 OUTN 808.0 418.9
12 OUTP 808.0 537.3
13 ACGND 619.9 658.0

X

Coordinate

(µm)

Y

Coordinate

(µm)

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SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

The diagram below shows the bondpad configuration of the SE1050W Transimpedance Amplifier. Note that the
diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. All VCC and
GND pads must be bonded to minimize inductive effects.

Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.

121.7 113.2 385.0 188.1

121.7 113.2 385.0 188.1

147.7

147.7

Top

Top

904.0

904.0

View

View

510.3

510.3

116.5 117.0 131.7 115.0 212.8 115.0

116.5 117.0 131.7 115.0 212.8 115.0

1053.0

1053.0

Side View

Side View

All Dimensions in Microns (µm)

All Dimensions in Microns (µm)

418.9 118.4 120.7

418.9 118.4 120.7

250.0

250.0

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7 8 3 1 4 5 6 12 11

13 9 10

NC

7 8 3 1 4 5 6 12 11

13 9 10

NC

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

Applications Information

For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the
first diagram below. All VCC and GND pads must be wire bonded to ensure correct high frequency performance.

Connections for differential operation:

+5 V

PIN Bias

1 nF min

TZ_IN

PIN

0 V

Connections for single ended operation:

+5 V

PIN Bias

1 nF min

TZ_IN

PIN

VCC2

GND

2

VCC2

TZ Amplifier

GND

2

VCC1

TZ Amplifier

SE1050W

VCC1

SE1050W

OUTP

OUTN

ACGND

OUTP

OUTN

ACGND

1 nF min

To 50 O loads,
AC coupled

1 nF min

To 50 O load,
AC coupled

1 nF min

0 V

45-DST-01 § Rev 1.5 § May 24/02 8 of 11

0.5

0.7

0.9

1.1

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

As a guide to the effect of bondwire length on inductance, the table below gives some examples of observed
inductance per millimeter for popular gold bondwire diameters. The effect of input bondwire inductance on
Bandwidth, Input Referred Noise and Gain Peak, is shown in the graphs below.

Bondwire diameter ( µm)

25 0.81
30 0.77
32 0.76

11

10

Bandwidth vs Input Bondwire Inductance

Differential Mode of Operation

Inductance per mm (nH)

9

Bandwidth (GHz)

8

7

Cpin = 0.2 pF

Cpin = 0.25 pF

1.3 1.5

Input Inductance (nH)

45-DST-01 § Rev 1.5 § May 24/02 9 of 11

Input Referred Noise vs Input Bondwire Inductance

Input Referred Noise (uA)

1.2

1.5

1.3

0.5

0.7

0.9

1.1

Cpin = 0.2 pF

Cpin = 0.25 pF

0.0

4.0

3.0

0.7

0.9

1.1

1.3

Cpin = 0.2 pF

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

Final

1.7

1.6

1.4

Differential Mode of Operation

1.3 1.5

Input Inductance (nH)

2.0

Gain Peak (dB)

1.0

Gain Peak vs Input Bondwire Inductance

Differential Mode of Operation

Cpin = 0.25 pF

45-DST-01 § Rev 1.5 § May 24/02 10 of 11

0.5

1.5

Input Inductance (nH)

SE1050W

LightCharger™ 10 Gb/s Transimpedance Amplifier

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[email protected]

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Final

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USA 95112 Cambridge CB3 6DP

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Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change
information at any time without notification.

Preliminary
The datasheet contains information from the design target specification. SiGe Semiconductor reserves the right to change
information at any time without notification.

Final
The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change
information at any time without notification. Production testing may not include testing of all parameters.

Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
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All Rights Reserved

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