ROHM US6J2 Schematic [ru]
Transistors
2.5V Drive Pch+Pch MOSFET
US6J2
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Two Pch MOSFET transistors in a single
TUMT6 package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device
ideal for portable equipment.
5) Drive circuits can be simple.
zApplications zInner circuit
Switchi ng
zPackaging specifications
Type
US6J2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and T r2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤50%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
∗1
∗1
∗2
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
Rth(ch-a)
∗
TUMT6
(6)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits Unit
−20
±12
±1
±4
−0.4
−4
1.0
150
125
179
V
V
A
A
A
A
W / TOTAL
W / ELEMENT0.7
°C
°C
°C/W / TOTAL
°C/W / ELEMENT
Abbreviated symbol : J02
(5)
(2)
(4)
∗1
(3)
0.2Max.
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
US6J2
Rev.B 1/4
Transistors
zElectrical characteristics (T a=25°C)
<It is the same characteristics for Tr1 and Tr2 MOSFET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
<Body diode (Source-drain)>
Parameter Symbol
V
(BR) DSS
V
R
Min.−Typ. Max.
I
GSS
−±10 µAV
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
−−−1.0 µAV
−0.7 −−2.0 V V
− 280 390 I
∗
− 310 430 mΩ
− 570 800 I
∗
0.7 −−SV
fs
− 150 − pF V
iss
− 2020− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
9
−
8
−
25
−
10
−
2.1
−
0.5
−
0.5
−−nC I
Min. Typ. Max.
V
SD
−−−1.2 V IS= −0.4A, VGS=0VForward voltage
Unit
=±12V, VDS=0V
GS
= −20V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −1A, VGS= −4.5V
mΩ
D
= −1A, VGS= −4V
I
D
= −0.5A, VGS= −2.5V
mΩ
D
= −10V, ID= −0.5A
DS
= −10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
ID= −0.5A
V
DD
GS
= −4.5V
V
R
L
=30Ω
R
G
=10Ω
−15V
V
DD
= −4.5V
GS
= −1A
D
Unit
−15V
Conditions
L
=15Ω
R
R
G
=10Ω
Conditions
US6J2
Rev.B 2/4
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