Transistors
2.5V Drive Pch+Pch MOSFET
US6J2
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Two Pch MOSFET transistors in a single
TUMT6 package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device
ideal for portable equipment.
5) Drive circuits can be simple.
zApplications zInner circuit
Switchi ng
zPackaging specifications
Type
US6J2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and T r2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤50%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
∗1
∗1
∗2
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
Rth(ch-a)
∗
TUMT6
(6)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits Unit
−20
±12
±1
±4
−0.4
−4
1.0
150
125
179
V
V
A
A
A
A
W / TOTAL
W / ELEMENT0.7
°C
°C
°C/W / TOTAL
°C/W / ELEMENT
Abbreviated symbol : J02
(5)
(2)
(4)
∗1
(3)
0.2Max.
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
US6J2
Rev.B 1/4
Transistors
zElectrical characteristics (T a=25°C)
<It is the same characteristics for Tr1 and Tr2 MOSFET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
<Body diode (Source-drain)>
Parameter Symbol
V
(BR) DSS
V
R
Min.−Typ. Max.
I
GSS
−±10 µAV
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
−−−1.0 µAV
−0.7 −−2.0 V V
− 280 390 I
∗
− 310 430 mΩ
− 570 800 I
∗
0.7 −−SV
fs
− 150 − pF V
iss
− 2020− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
9
−
8
−
25
−
10
−
2.1
−
0.5
−
0.5
−−nC I
Min. Typ. Max.
V
SD
−−−1.2 V IS= −0.4A, VGS=0VForward voltage
Unit
=±12V, VDS=0V
GS
= −20V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −1A, VGS= −4.5V
mΩ
D
= −1A, VGS= −4V
I
D
= −0.5A, VGS= −2.5V
mΩ
D
= −10V, ID= −0.5A
DS
= −10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC V
ID= −0.5A
V
DD
GS
= −4.5V
V
R
L
=30Ω
R
G
=10Ω
−15V
V
DD
= −4.5V
GS
= −1A
D
Unit
−15V
Conditions
L
=15Ω
R
R
G
=10Ω
Conditions
US6J2
Rev.B 2/4
Transistors
zElectrical characteristic curves
1000
(pF)
100
CAPACITANCE : C
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
10
(A)
1
D
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
Ta=25°C
f=1MHz
=0V
V
GS
C
C
C
DS
VDS= −10V
Pulsed
iss
rss
oss
US6J2
10000
1000
(ns)
SWITCHING TIME : t
(V)
t
f
100
t
d (off)
t
d (on)
10
t
r
1
0.01 0.1 1 10
DRAIN CURRENT : −I
Ta=25°C
= −15V
V
DD
= −4.5A
V
GS
=10Ω
R
G
Pulsed
(A)
D
Fig.2 Switching Characteristics
1000
(mΩ)
DS (on)
750
R
500
ID= −1A
ID= −0.5A
Ta=25°C
Pulsed
8
Ta=25°C
(V)
V
= −15V
DD
7
= −1A
I
D
GS
R
=10Ω
G
6
Pulsed
5
4
3
2
1
GATE-SOURCE VOLTAGE : −V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
TOTAL GATE CHARGE : Qg (nC)
Fig.3
Dynamic Input Characteristics
10
(A)
S
1
Ta=25°C
VGS=0V
Pulsed
0.01
DRAIN CURRENT : −I
0.001
0.6 1.0 1.4 1.8 2.2 2.6 3.0
GATE-SOURCE VOLTAGE : −V
Fig.4
Typical Transfer Characteristics
10000
(mΩ)
DS (on)
R
Ta=125°C
1000
Ta=75°C
Ta=25°C
Ta= −25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
100
0.01 0.1 1 10
DRAIN CURRENT : −I
Fig.7
Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
GS
V
GS
Pulsed
(A)
D
250
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
024681012
(V)
GATE-SOURCE VOLTAGE : −V
(V)
GS
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
0.1
SOURCE CURRENT : −I
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : −V
Fig.6 Source Current vs.
Source-Drain Voltage
(V)
SD
Voltage
10000
=
−
4.5V
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
1000
Ta=25°C
Ta= −25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
100
0.01 0.1 1 10
DRAIN CURRENT : −I
Fig.8
Static Drain-Source On-State
V
GS
Pulsed
(A)
D
=
−
4V
Resistance vs. Drain Current (ΙΙΙ)
10000
(mΩ)
DS (on)
R
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
100
0.01 0.1 1 10
DRAIN CURRENT : −I
Fig.9
Static Drain-Source On-State
Resistance vs. Drain Current (Ι)
V
=
GS
Pulsed
(A)
D
−
2.5V
Rev.B 3/4
Transistors
zMeasurement circuits
VGS
RG
D
I
D.U.T.
RL
VDD
VDS
US6J2
Pulse Width
GS
V
V
10%
50%
10% 10%
DS
90% 90%
t
d(on)
t
r
t
on
90%
d(off)
t
t
50%
tf
off
Fig.10 Switching Time Measurement Circuit
V
I
G(Const.)
GS
R
G
D
I
D.U.T.
V
DS
R
L
V
DD
Fig.12 Gate Charge Measurement Circuit
Fig.11 Switching Waveforms
V
G
g
Q
V
GS
Qgs Qgd
Charge
Fig.13 Gate Charge Waveform
Rev.B 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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