Transistor
2.5V Drive Pch+SBD MOSFET
US5U30
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
Schottky Barrier DIODE
zFeatures
1) The US5U30 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-state resistance with fast sw itching.
3) Low voltage drive(2.5V)
4) Built-in schottky barrier diode has low forward voltage.
zApplications
Load switch, DC/DC conversion
zPackaging specifications zEquivalent circuit
Type
US5U30
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
TUMT5
2.0
1.3
Abbreviated symbol : U30
(5)
∗2
US5U30
0.2Max.
(4)
∗1 ESD protection diode
∗2 Body diode
(1) (2)
∗1
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
Rev.B 1/4
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
∗1
∗1
∗3
∗2
∗3
∗3
−55 to +150
Max.
±10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
− nC
0.47 V I
Limits Unit
−20
±12
±1
±4
−0.4
−4
°C
0.7
150
0.5
1.0
W / ELEMENT
°C
W / ELEMENT
W / TOTAL
°C
Unit
µAVGS=±12V, VDS=0V
VID=−1mA, VGS=0V
µAVDS=−20V, VGS=0V
VVDS=−10V, ID=−1mA
mΩ I
D
=−1A, VGS=−4.5V
mΩ ID=−1A, VGS=−4V
mΩ I
D
=−0.5A, VGS=−2.5V
SV
DS
=−10V, ID=−0.5A
pF VDS=−10V
pF VGS=0V
pF f=1MHz
ns ID=−0.5A
V
DD
ns
ns
ns
nC
nC
−15
V
GS
=−4.5V
R
L
=30Ω
R
G
=10Ω
V
DD
−15
I
D
=−1A
R
L
=15Ω RG=10Ω
Unit
Unit
F=0.5A
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power dissipation
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz
•
1cyc. ∗3 Mounted on a ceramic board
zElectrical characteristics (T a=25°C)
<
MOSFET
>
Parameter Symbol
I
(BR) DSS
V
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
GSS
DSS
Yfs
Q
∗
∗
iss
oss
rss
∗
∗
t
r
∗
∗
t
f
g
gs
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
<
Body diode (source−drain)
>
Parameter Symbol
Forward voltage
V
SD
<Di>
Parameter Symbol
FForward voltage
V
R −−100 µAVR=20V
Reverse current
I
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch 150
P
D
V
RM
V
R
I
F
I
FSM
Tj
P
D
P
D
Tstg
Min.
Typ.
−
−
−20
−
−
−
−0.7
−
−
280
−
310
−
570
0.7
−
−
150
−
20
−
20
−
9
−
8
−
25
−
10
−
2.1
−
0.5
−
0.5
Min. Typ. Max.
−−−1.2 V IS=−0.4A, VGS=0V
Min. Typ. Max.
−−0.36 V IF=0.1A
−−
V
V
A
A
A
A
V30
V20
A0.5
A2
Conditions
V
V
V
Conditions
Conditions
GS
=−4.5V
US5U30
Rev.B 2/4
Transistor
zElectrical characteristic curves
10
1
(A)
D
Drain Current : −I
0.1
0.01
0.001
Ta=125°C
75°C
25°C
−20°C
0 0.5 1.0
1.5
Gate−Source Voltage : VGS[V]
2.0 2.5 3.0 3.5 4.0
Fig.1 Typical Transfer Characteristics
1000
Ta=125°C
75°C
100
25°C
(on)[mΩ]
−25°C
DS
R
Static Drain−Source On−State Resistance
10
0.1 1
Drain Current : −ID[A]
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current
VDS=−10V
Pulsed
VGS=−2.5V
Pulsed
1000
100
Ta=125°C
(on)[mΩ]
DS
R
Static Drain−Source On−State Resistance
75°C
25°C
−25°C
10
0.1 1
Drain Current : −ID[A]
Fig.2 Static Drain−Source On−State
Resistance
400
350
I
D=−
0.75A
−1.5A
Gate−Source Voltage : −VGS[V]
Static Drain−Source On−State Resistance
10
300
250
200
(on)[mΩ]
DS
R
150
100
50
0
Fig.5 Static Drain−Source On−State
vs.Drain Current
vs.Gate−Source VoltageResistance
VGS=−4.5V
Pulsed
Ta=25 C
Pulsed
100128426
Static Drain−Source On−State Resistance
10
Static Drain-Source On−State Resistance
US5U30
1000
(on)[mΩ]
100
DS
Ta=125°C
R
75°C
25°C
−25°C
10
0.1 1
Fig.3 Static Drain−Source On−State
Resistance
1000
100
(on)[mΩ]
DS
R
10
0.1 1
Fig.6 Static Drain−Source On−State
Resistance
Drain Current : −ID[A]
VGS=−2.5V
−4.0V
−4.5V
Drain Current : −ID[A]
vs.Drain Current
vs.Drain Current
VGS=−4V
Pulsed
Ta=25 C
Pulsed
10
10
10
[A]
DR
1
Ta=125°C
75°C
25°C
−25°C
0.1
Reverse Drain Current : −I
0.01
0 0.5
Source−Drain Voltage : −V
Fig.7 Reverse Drain Current
vs. Source-Drain Current
VGS=0V
Pulsed
1.0
1.5
SD
[V]
10000
1000
100
Capacitance : C [pF]
10
2.0
0.01 0.1 1 10 100
Drain−Source Voltage : −V
Fig.8 Typical Capactitance
vs.Drain−Source Voltage
DS
Ta=25 C
f=1MHZ
V
GS
C
oss
C
[V]
=0V
C
iss
rss
1000
100
10
Switching Time : t [ns]
1
0.01 0.1 1 10
t
t
d(off)
t
d(on)
t
r
Drain Current : −I
f
Ta=25 C
V
DD=−15V
GS=−4.5V
V
RG=10Ω
Pulsed
D
[A]
Fig.9 Switching Characteristics
Rev.B 3/4
Transistor
8
7
[V]
6
GS
5
4
3
2
Gate-Source Voltage: -V
1
0
01
Fig.10 Dynamic Input Characteristics
zMeasurement circuits
2345
Total Gate Charge : Qg[nC]
Ta=25 C
V
DD
=−15V
I
D
=−2.5A
R
G
=10Ω
Pulsed
1000
Ta=125°C
75°C
25°C
−25°C
100
[mA]
F
10
Forward Current : I
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6
6
Forward Voltage :VF [V]
Fig.11 Forward Temperature Characteristics
100
10
[A]
R
1
0.1
0.01
Reverse Current : I
0.001
0.0001
010203040
Reverse Voltage : VR[V]
Fig.12 Reverse Temperature Characteristics
V
GS
10%
50%
Pulse Width
US5U30
125°C
75°C
25°C
−25°C
50%
90%
V
GS
R
G
D.U.T.
D
I
V
DS
R
L
V
DD
Fig.13 Switching Time Measurement Circuit
V
I
D
D.U.T.
IG(Const)
V
GS
R
G
Fig.15 Gate Charge Measurement Circuit
DS
R
L
V
DD
t
d(off)
10%
90%
t
f
t
off
10%
V
DS
90%
t
r
t
d(on)
t
on
Fig.14 Switching Waveforms
G
V
Qg
VGS
Qgs Qgd
Charge
Fig.16 Gate Charge Waveforms
Rev.B 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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