ROHM US5U30 Schematic [ru]

Transistor

2.5V Drive Pch+SBD MOSFET

US5U30

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
Schottky Barrier DIODE

zFeatures

1) The US5U30 combines Pch MOSFET with a
Schottky barrier diode in a TUMT5 package.

2) Low on-state resistance with fast sw itching.

3) Low voltage drive(2.5V)

4) Built-in schottky barrier diode has low forward voltage.

zApplications

Load switch, DC/DC conversion

zPackaging specifications zEquivalent circuit

Type

US5U30

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

TUMT5

2.0

1.3

Abbreviated symbol : U30

(5)

∗2

US5U30

0.2Max.

(4)

∗1 ESD protection diode
∗2 Body diode

(1) (2)

∗1

(3)

(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain

Rev.B 1/4

Transistor

zAbsolute maximum ratings (Ta=25°C)

<MOSFET>

∗1

∗1

∗3

∗2

∗3

∗3

−55 to +150

Max.

±10

−

−1

−2.0

390
430
800

−

−

−

−

−

−

−

−

−

−

− nC

0.47 V I

Limits Unit

−20
±12

±1
±4

−0.4

−4
°C

0.7

150

0.5

1.0

W / ELEMENT

°C

W / ELEMENT

W / TOTAL

°C

Unit

µAVGS=±12V, VDS=0V

VID=−1mA, VGS=0V

µAVDS=−20V, VGS=0V

VVDS=−10V, ID=−1mA

mΩ I

D

=−1A, VGS=−4.5V
mΩ ID=−1A, VGS=−4V
mΩ I

D

=−0.5A, VGS=−2.5V

SV

DS

=−10V, ID=−0.5A
pF VDS=−10V
pF VGS=0V
pF f=1MHz

ns ID=−0.5A

V

DD

ns
ns

ns
nC
nC

−15

V

GS

=−4.5V

R

L

=30Ω

R

G

=10Ω

V

DD

−15

I

D

=−1A

R

L

=15Ω RG=10Ω

Unit

Unit

F=0.5A

Parameter
Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Channel temperature
Power dissipation

<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation

<MOSFET AND Di>
Total power dissipation
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

•

1cyc. ∗3 Mounted on a ceramic board

zElectrical characteristics (T a=25°C)

<

MOSFET

>

Parameter Symbol

I

(BR) DSS

V

I

V

GS (th)

R

DS (on)

C

C
C

t

d (on)

t

d (off)

Q

Q

GSS

DSS

Yfs

Q

∗

∗

iss
oss
rss

∗

∗

t

r

∗

∗

t

f

g
gs
gd

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗ Pulsed

<

Body diode (source−drain)

>

Parameter Symbol

Forward voltage

V

SD

<Di>

Parameter Symbol

FForward voltage

V

R −−100 µAVR=20V

Reverse current

I

Symbol

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

Tch 150

P

D

V

RM

V

R

I

F

I

FSM

Tj

P

D

P

D

Tstg

Min.

Typ.

−

−

−20

−

−

−

−0.7

−

−

280

−

310

−

570

0.7

−

−

150

−

20

−

20

−

9

−

8

−

25

−

10

−

2.1

−

0.5

−

0.5

Min. Typ. Max.

−−−1.2 V IS=−0.4A, VGS=0V

Min. Typ. Max.

−−0.36 V IF=0.1A

−−

V
V
A
A
A
A

V30
V20
A0.5
A2

Conditions

V

V

V

Conditions

Conditions

GS

=−4.5V

US5U30

Rev.B 2/4