ROHM US5U1 Technical data
US5U1
Transistors
2.5V Drive Nch+SBD MOSFET
US5U1
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V
F schottky barrier diode.
zApplications
Switching
zPackage specifications zInner circuit
Type
US5U1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Channel temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
Limits Unit
±1.5
∗1
±6.0
0.75
∗1
6.0
∗2
150
30
12
W / ELEMENT0.7
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Power dissipation
Junction temperature
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Parameter
Symbol
RM
R
I
F
I
FSM
P
D
Tj
Limits Unit
30
20
0.5
∗1
2.0
∗2
0.5
150
W / ELEMENT
°C
∗1 ESD protection diode
∗2 Body diode
VV
VV
AI
AI
AI
AI
°CTch
VV
VV
A
A
TUMT5
Abbreviated symbol : U01
(5)
∗1
(1) (2)
2.0
1.3
0.2Max.
(4)
∗2
(1)Gate
(2)Source
(3)Anode
(3)
(4)Cathode
(5)Drain
Rev.B 1/3
Transistors
<MOSFET and Di>
Parameter Symbol
Total power dissipation
Range of storage temperature
∗1 Mounted on a ceramic board
zElectrical characteristics (T a=25°C)
<MOSFET>
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter Symbol
<Di>
Parameter Symbol
Forward voltage
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
V
GSS
DSS
Y
oss
rss
t
t
Q
SD
V
R
I
fs
iss
r
f
g
gs
gd
F
Limits Unit
∗1
D
1.0
W / TOTALP
−55 to +150
Min.−Typ. Max.
Unit
− 10 µAVGS=12V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
0.5 − 1.5 V V
− 170 240 I
∗
− 180 250 mΩ
− 240 340 I
∗
1.5 −−SV
mΩ
mΩ
− 80 − pF V
− 1412− pF V
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−
∗
−−nC R
Min. Typ. Max.
− pF f=1MHz
7
− ns
9
− ns
15
− ns
6
− ns
1.6
2.2 nC
0.5
− nC I
0.3
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.5A, VGS= 4.5V
D
I
= 1.5A, VGS= 4V
D
= 1.5A, VGS= 2.5V
D
= 10V, ID= 1.5A
DS
= 10V
DS
=0V
GS
V
DD
15V
ID= 0.75A
V
GS
= 4.5V
R
L
= 20Ω
R
G
=10Ω
15V, VGS= 4.5V
V
DD
= 1.5A
D
= 10Ω, RG= 10Ω
L
−−1.2 V IS= 0.75A, VGS=0VForward voltage
Min. Typ. Max.
Unit
−−0.36 V IS= 0.1A
−−0.47 V I
= 0.5A
S
−−100 µAIS= 20VReverse current
US5U1
°CTstg
Conditions
Conditions
Conditions
Rev.B 2/3
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