ROHM EMH4, IMH4A, UMH4N Schematic [ru]

EMH4 / UMH4N / IMH4A

General purpose (dual digital transistors)

EMH4 / UMH4N / IMH4A

!!Transistors

zFeatures

1) Two DTC114T chips in a EMT or UMT or SMT
package.

zEquivalent circuit s

EMH4 / UMH4N

(4) (5) (6)

(1)(2)(3)

R

1

R

1

R

1

=10KΩ R1=10KΩ

IMH4A

R

1

R

1

(3) (2) (1)

(6)(5)(4)

zPackage, marking, andpackaging specifications

H4
TN

IMH4A

SMT6

H4
T110
3000

Type

Package

Marking

Code

Basic ordering unit (pieces)

EMH4
EMT5

H4

T2R

8000

UMH4N

UMT6

3000

zExternal dimensions (Unit : mm)

EMH4

(3)

ROHM : EMT6

UMH4N

ROHM : UMT6
EIAJ : SC-88

0.2

0.15

0.1Min.

0.22

0.13

(4)

(6)

)

4

(

)

5

(

)

6

(

0.5

(2)(5)

0.5

(1)

1.2

1pin mark

1.6

Each lead has same dimensions

)

3

(

)

2

(

)

1

(

1.25

2.1

0~0.1

Each lead has same dimensions

0.65

0.65

0.7

1.0

1.6

0.5

1.3

2.0

0.9

zAbsolute maximum ratings (Ta=25qC)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Storage temperature

∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.

Parameter Symbol

EMH4 / UMH4N

IMH4A

V
V
V

Pd

Tstg

CBO
CEO
EBO

I

C

Tj

Limits

50
50

5

100
150(TOTAL)
300(TOTAL)

150

to

+150

−55

Unit

mA

mW

V
V
V

∗1

∗2
°C
°C

IMH4A

ROHM : SMT6
EIAJ : SC-74

0.3

0.15

0.3Min.

)(

)

6

1

(

(

0~0.1

0.95

)

1.9

2

(

0.95

)

3

(

1.1

0.8

)(

5
)

4

1.6

2.8

Each lead has same dimensions

2.9

Rev.A 1/2

zElectrical characteristics (Ta=25qC)

Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance

∗Transition frequency of the device.

zElectrical characteristics curves

1k

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

Ta=100°C

Fig.1 DC current gain vs. collector

current

25

−40°C

V

CE

=

5V

°C

C

(A)

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

R

1

(V)

CE(sat)

COLLECTOR SATURATION VOLTAGE : V

50
50

100

1

500m

200m
100m

50m

20m
10m

5m

2m
1m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

−

−

−

5

−

−

−

−

−

−

250
250

−

71013

Ta=100°C

25°C

−40°C

Fig.2 Collector-emitter saturation

voltage vs. collector current

EMH4 / UMH4N / IMH4A

Conditions

=50V
=4V

=10mA/1mA
=5V, IC=1mA
=10V, IE= −5mA, f=100MHz

−

0.5

0.5

0.3

600

−

−

−

−

C

lC/lB=10

(A)

Unit

V
V
V

μA
μA

V

−

MHz

kΩ

I

C

=50μA

I

C

=1mA

I

E

=50μA

V

CB
EB

V
I

C/IB

CE

V
V

CE

!!Transistors

∗

Rev.A 2/2