Datasheet RCD100N20 Datasheet (ROHM)

Data Sheet

10V Drive Nch MOSFET

RCD100N20

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide range of SOA.

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

CPT3

(SC-63)
<SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

RCD100N20 

(1) Gate

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

E

DSS

GSS

DP

SP

I

AS

D

S

AS

200 V

30 V

*3

*1

10 A

40 A

10 A

*1

*2

*2

*4

D

40 A

5A

7.35 mJ

20 W

(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

∗1

(1) (3)(2)

1 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 6.25 C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

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Symbol Limits Unit

*

1/6

2011.10 - Rev.A

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Data Sheet

RCD100N20

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

200 - - V ID=1mA, VGS=0V

--10AVDS=200V, VGS=0V

3.25 - 5.25 V VDS=10V, ID=1mA

*

- 140

*

l 2.1 4.2 - S VDS=10V, ID=5A

182

- 1400 - pF VDS=25V

- 95 - pF VGS=0V

- 45 - pF f=1MHz

- 25 - ns VDD 100V, ID=5A

*

*

- 35 - ns VGS=10V

*

*

- 40 - ns RL=20

*

*

- 15 - ns RG=10

*

*

- 25 - nC VDD 100V, ID=10A

*

*

-9-nCV

*

*

-9-nC

*

*

ID=5A, VGS=10V

m

GS

=10V

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=10A, VGS=0V

2/6

2011.10 - Rev.A

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Data Sheet

RCD100N20

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=5.5V

VGS=10.0V

VGS=7.0V

VGS=8.0V

VGS=6.0V

VGS=6.5V

Ta=25°C
Pulsed

0.001

0.01

0.1

1

10

100

1 2 3 4 5 6 7 8 9 10

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= - 25°C

0

1

2

3

4

5

-50 -25 0 25 50 75 100 125 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

0.01

0.1

1

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

: R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance

: R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=5A

ID=10A

0

2

4

6

8

10

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=6.0V

VGS=10.0V

VGS=8.0V

VGS=6.5V

VGS=7.0V

VGS=5.5V

Ta=25°C
Pulsed

3/6

2011.10 - Rev.A

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Data Sheet

RCD100N20

0.01

0.1

1

10

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C

0.1

0.15

0.2

0.25

0.3

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=10A

ID=5.0A

Ta=25°C
Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒100V
V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

5

10

15

0 5 10 15 20 25 30 35 40

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

T

a

=25°C

VDD=100V
I

D

=10A

Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz
VGS=0V

C

iss

C

oss

C

rss

4/6

2011.10 - Rev.A

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Data Sheet

RCD100N20

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.13 Maximum Safe Operating Area

T

a

=25°C

Single Pulse
Mounted on a ceramic board.
（30mm × 30mm × 0.8mm)

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Mounted on a ceramic board.
(30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=43.5°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

5/6

2011.10 - Rev.A

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Data Sheet

RCD100N20

F

it

%

V
V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

R

L

V

DD

D

I

R

L

V

DD

Pulse width

V

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

V

GS

R

G

D.U.T.

I

AS

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

V

DS

V(BR)DSS

IAS

VDD

EAS =

1

L

2

V(BR)DSS

2

I

AS

V

(BR)DSS

-

VDD

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

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