ROHM RCD100N20 Technical data
Data Sheet
10V Drive Nch MOSFET
RCD100N20
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Application
Switching
CPT3
(SC-63)
<SOT-428>
0.75
6.5
5.1
0.9
0.65
2.30.9
(1)
(3)
(2)
2.3
0.5
1.5
5.5
2.3
1.5
0.8Min.
0.5
1.0
9.5
2.5
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 2500
RCD100N20
(1) Gate
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current
Avalanche energy
Power dissipation P
E
DSS
GSS
DP
SP
I
AS
D
S
AS
200 V
30 V
*3
*1
10 A
40 A
10 A
*1
*2
*2
*4
D
40 A
5A
7.35 mJ
20 W
(2) Drain
(3) Source
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, V
*3 Limited only by maximum channel temperature allowed.
=25C
*4 T
C
=50V, RG=25, Tch=25C
DD
∗1
(1) (3)(2)
1 BODY DIODE
Thermal resistance
Parameter
Channel to Case Rth (ch-c) 6.25 C / W
* TC=25°C
* Limited only by maximum channel temperature allowed.
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Symbol Limits Unit
*
1/6
2011.10 - Rev.A
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Data Sheet
RCD100N20
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=30V, VDS=0V
200 - - V ID=1mA, VGS=0V
--10AVDS=200V, VGS=0V
3.25 - 5.25 V VDS=10V, ID=1mA
*
- 140
*
l 2.1 4.2 - S VDS=10V, ID=5A
182
- 1400 - pF VDS=25V
- 95 - pF VGS=0V
- 45 - pF f=1MHz
- 25 - ns VDD 100V, ID=5A
*
*
- 35 - ns VGS=10V
*
*
- 40 - ns RL=20
*
*
- 15 - ns RG=10
*
*
- 25 - nC VDD 100V, ID=10A
*
*
-9-nCV
*
*
-9-nC
*
*
ID=5A, VGS=10V
m
GS
=10V
Body diode characteristics (Source-Drain)
Parameter Conditions
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.5 V Is=10A, VGS=0V
2/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RCD100N20
Electrical characteristic curves (Ta=25C)
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=5.5V
VGS=10.0V
VGS=7.0V
VGS=8.0V
VGS=6.0V
VGS=6.5V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
100
1 2 3 4 5 6 7 8 9 10
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0
1
2
3
4
5
-50 -25 0 25 50 75 100 125 150
Gate Threshold Voltage : V
GS(th)
[V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
I
D
=1mA
pulsed
0.01
0.1
1
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
: R
DS(on)
[Ω]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
-50 -25 0 25 50 75 100 125 150
Static Drain-Source On-State Resistance
: R
DS(on)
[Ω]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=5A
ID=10A
0
2
4
6
8
10
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=6.0V
VGS=10.0V
VGS=8.0V
VGS=6.5V
VGS=7.0V
VGS=5.5V
Ta=25°C
Pulsed
3/6
2011.10 - Rev.A
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